An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED
Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, an...
- Autores:
-
Zarate Galvez, Sarai
- Tipo de recurso:
- Fecha de publicación:
- 2022
- Institución:
- Universidad del Atlántico
- Repositorio:
- Repositorio Uniatlantico
- Idioma:
- eng
- OAI Identifier:
- oai:repositorio.uniatlantico.edu.co:20.500.12834/771
- Acceso en línea:
- https://hdl.handle.net/20.500.12834/771
- Palabra clave:
- InGaN/GaN
blue light emitting diodes
quantumefficiency
quantumdrift-diffusionmodel
- Rights
- openAccess
- License
- http://creativecommons.org/licenses/by-nc/4.0/
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An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED |
| title |
An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED |
| spellingShingle |
An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED InGaN/GaN blue light emitting diodes quantumefficiency quantumdrift-diffusionmodel |
| title_short |
An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED |
| title_full |
An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED |
| title_fullStr |
An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED |
| title_full_unstemmed |
An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED |
| title_sort |
An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED |
| dc.creator.fl_str_mv |
Zarate Galvez, Sarai |
| dc.contributor.author.none.fl_str_mv |
Zarate Galvez, Sarai |
| dc.contributor.other.none.fl_str_mv |
Garcia Barrientos, Abel Ambrosio Lazaro, Roberto Garcia Ramirez, Mario Stevens Navarro, Enrique Plaza Castillo, Jairo Hoyo Montaño, Jose Perez Cortes, Obed |
| dc.subject.keywords.spa.fl_str_mv |
InGaN/GaN blue light emitting diodes quantumefficiency quantumdrift-diffusionmodel |
| topic |
InGaN/GaN blue light emitting diodes quantumefficiency quantumdrift-diffusionmodel |
| description |
Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, and doping-concentration data already reported in the literature. The power law mobility is used for the current calculation in the quantum drift-diffusion model. The results indicate the lower hole and electron leakage currents correspond to the lowest mobility values for the InGaN alloy, the greatest amount of recombination occurs in the extreme wells within the active layer of the LED and the stable emission is at 3.6 V with peak wavelength ˆl LED = 456.7 nm and full width at half maximum FWHM 11.1 nm for the three mobilities. Although experimental and theoretical mobility values reach higher carrier density and recombination, the photon emission is broader and unstable. Additionally, the doping-concentration mobility results in lower wavelength shifts and narrows FWHM, making it more stable. The highest quantum efficiency achieved by dopingconcentration mobility is only in the breakdown voltage (hdop�����max = 60.43%), which is the IQE value comparable to similar LEDs and is more useful for these kinds of semiconductor devices. |
| publishDate |
2022 |
| dc.date.accessioned.none.fl_str_mv |
2022-11-15T19:12:12Z |
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2022-11-15T19:12:12Z |
| dc.date.issued.none.fl_str_mv |
2022-08-08 |
| dc.date.submitted.none.fl_str_mv |
2022-07-02 |
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http://purl.org/coar/version/c_970fb48d4fbd8a85 |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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Artículo |
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publishedVersion |
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Zarate-Galvez, S.; Garcia-Barrientos, A.; Ambrosio-Lazaro, R.; Garcia-Ramirez, M.; Stevens-Navarro, E.; Plaza-Castillo, J.; Hoyo-Montaño, J.; Perez-Cortes, O. An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED. Crystals 2022, 12, 1108. https:// doi.org/10.3390/cryst12081108 |
| dc.identifier.uri.none.fl_str_mv |
https://hdl.handle.net/20.500.12834/771 |
| dc.identifier.doi.none.fl_str_mv |
10.3390/cryst12081108 |
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Universidad del Atlántico |
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Repositorio Universidad del Atlántico |
| identifier_str_mv |
Zarate-Galvez, S.; Garcia-Barrientos, A.; Ambrosio-Lazaro, R.; Garcia-Ramirez, M.; Stevens-Navarro, E.; Plaza-Castillo, J.; Hoyo-Montaño, J.; Perez-Cortes, O. An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED. Crystals 2022, 12, 1108. https:// doi.org/10.3390/cryst12081108 10.3390/cryst12081108 Universidad del Atlántico Repositorio Universidad del Atlántico |
| url |
https://hdl.handle.net/20.500.12834/771 |
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eng |
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eng |
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openAccess |
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Zarate Galvez, Sarai733f5994-6323-49d9-a469-e8b1b4ed5f3eGarcia Barrientos, AbelAmbrosio Lazaro, RobertoGarcia Ramirez, MarioStevens Navarro, EnriquePlaza Castillo, JairoHoyo Montaño, JosePerez Cortes, ObedColombia2022-11-15T19:12:12Z2022-11-15T19:12:12Z2022-08-082022-07-02Zarate-Galvez, S.; Garcia-Barrientos, A.; Ambrosio-Lazaro, R.; Garcia-Ramirez, M.; Stevens-Navarro, E.; Plaza-Castillo, J.; Hoyo-Montaño, J.; Perez-Cortes, O. An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED. Crystals 2022, 12, 1108. https:// doi.org/10.3390/cryst12081108https://hdl.handle.net/20.500.12834/77110.3390/cryst12081108Universidad del AtlánticoRepositorio Universidad del AtlánticoSimulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, and doping-concentration data already reported in the literature. The power law mobility is used for the current calculation in the quantum drift-diffusion model. The results indicate the lower hole and electron leakage currents correspond to the lowest mobility values for the InGaN alloy, the greatest amount of recombination occurs in the extreme wells within the active layer of the LED and the stable emission is at 3.6 V with peak wavelength ˆl LED = 456.7 nm and full width at half maximum FWHM 11.1 nm for the three mobilities. Although experimental and theoretical mobility values reach higher carrier density and recombination, the photon emission is broader and unstable. Additionally, the doping-concentration mobility results in lower wavelength shifts and narrows FWHM, making it more stable. The highest quantum efficiency achieved by dopingconcentration mobility is only in the breakdown voltage (hdop�����max = 60.43%), which is the IQE value comparable to similar LEDs and is more useful for these kinds of semiconductor devices.application/pdfenghttp://creativecommons.org/licenses/by-nc/4.0/Attribution-NonCommercial 4.0 Internationalinfo:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2CrystalsAn Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LEDPúblico generalInGaN/GaNblue light emitting diodesquantumefficiencyquantumdrift-diffusionmodelinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionArtículohttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_2df8fbb1BarranquillaFísicaSede NorteTrellakis, A.; Galick, A.T.; Pacelli, A.; Ravaioli, U. Iteration scheme for the solution of the two-dimensional Schröding-er-Poisson equations in quantum structures. J. Appl. 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[CrossRef]http://purl.org/coar/resource_type/c_2df8fbb1ORIGINALAn Analysis.pdfAn Analysis.pdfapplication/pdf9333686https://repositorio.uniatlantico.edu.co/bitstream/20.500.12834/771/1/An%20Analysis.pdf8699d8f50e20ae250d39ab65ac2ac8dfMD51CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8914https://repositorio.uniatlantico.edu.co/bitstream/20.500.12834/771/2/license_rdf24013099e9e6abb1575dc6ce0855efd5MD52LICENSElicense.txtlicense.txttext/plain; charset=utf-81306https://repositorio.uniatlantico.edu.co/bitstream/20.500.12834/771/3/license.txt67e239713705720ef0b79c50b2ececcaMD5320.500.12834/771oai:repositorio.uniatlantico.edu.co:20.500.12834/7712022-11-15 14:12:13.81DSpace de la Universidad de Atlánticosysadmin@mail.uniatlantico.edu.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 |