An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED
Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, an...
- Autores:
-
Zarate Galvez, Sarai
- Tipo de recurso:
- Fecha de publicación:
- 2022
- Institución:
- Universidad del Atlántico
- Repositorio:
- Repositorio Uniatlantico
- Idioma:
- eng
- OAI Identifier:
- oai:repositorio.uniatlantico.edu.co:20.500.12834/771
- Acceso en línea:
- https://hdl.handle.net/20.500.12834/771
- Palabra clave:
- InGaN/GaN
blue light emitting diodes
quantumefficiency
quantumdrift-diffusionmodel
- Rights
- openAccess
- License
- http://creativecommons.org/licenses/by-nc/4.0/