Monte carlo simulation of epitaxial growth of gainassb films

Material engineering finds an important support on simulation methods. The study of semiconductors growth techniques through simulation allows the determination of the influence of some growth parameters on the film properties. Experimentally, the variations of these parameters are difficult due to...

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Autores:
Morales, Jheison Alejandro
Ríos-Olaya, Manuel Eduardo
Tirado Mejia, Liliana
Tipo de recurso:
Article of journal
Fecha de publicación:
2014
Institución:
Universidad Nacional de Colombia
Repositorio:
Universidad Nacional de Colombia
Idioma:
spa
OAI Identifier:
oai:repositorio.unal.edu.co:unal/50493
Acceso en línea:
https://repositorio.unal.edu.co/handle/unal/50493
http://bdigital.unal.edu.co/44490/
Palabra clave:
Computational simulation
Kinetic Monte Carlo
Ising model
liquid phase epitaxy
GaInAsSb
Rights
openAccess
License
Atribución-NoComercial 4.0 Internacional
id UNACIONAL2_ceb8b2f977fdd19a1e2089c528ca7990
oai_identifier_str oai:repositorio.unal.edu.co:unal/50493
network_acronym_str UNACIONAL2
network_name_str Universidad Nacional de Colombia
repository_id_str
spelling Atribución-NoComercial 4.0 InternacionalDerechos reservados - Universidad Nacional de Colombiahttp://creativecommons.org/licenses/by-nc/4.0/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Morales, Jheison Alejandroa1b6e461-b83d-4c19-9164-1217cb486f40300Ríos-Olaya, Manuel Eduardo92232cdf-c844-4292-bfdc-8cafc34f8bcf300Tirado Mejia, Lilianaadcaadf6-46e8-4e8d-a30c-a4670a8ab2233002019-06-29T10:21:19Z2019-06-29T10:21:19Z2014-10-24https://repositorio.unal.edu.co/handle/unal/50493http://bdigital.unal.edu.co/44490/Material engineering finds an important support on simulation methods. The study of semiconductors growth techniques through simulation allows the determination of the influence of some growth parameters on the film properties. Experimentally, the variations of these parameters are difficult due to the high experimental demands and expenses. In this work we present the numerical simulation of the epitaxial growth of GaInAsSb by three methods. Devices based on this semiconductor material are thermophotovoltaic generators. The solid-on-solid approximation was used, considering the unit cell formed by the four constituent elements, in the establish proportions according to the choose stoichiometry. Through the Kinetic Monte Carlo method we obtained a high coincidence between the simulated film morphology and the obtained in the experimentally grown films.application/pdfspaUniversidad Nacional de Colombia Sede Medellínhttp://revistas.unal.edu.co/index.php/dyna/article/view/40991Universidad Nacional de Colombia Revistas electrónicas UN DynaDynaDyna; Vol. 81, núm. 187 (2014); 184-192 DYNA; Vol. 81, núm. 187 (2014); 184-192 2346-2183 0012-7353Morales, Jheison Alejandro and Ríos-Olaya, Manuel Eduardo and Tirado Mejia, Liliana (2014) Monte carlo simulation of epitaxial growth of gainassb films. Dyna; Vol. 81, núm. 187 (2014); 184-192 DYNA; Vol. 81, núm. 187 (2014); 184-192 2346-2183 0012-7353 .Monte carlo simulation of epitaxial growth of gainassb filmsArtículo de revistainfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501http://purl.org/coar/resource_type/c_2df8fbb1http://purl.org/coar/version/c_970fb48d4fbd8a85Texthttp://purl.org/redcol/resource_type/ARTComputational simulationKinetic Monte CarloIsing modelliquid phase epitaxyGaInAsSbORIGINAL40991-184698-1-SP.pdfapplication/pdf62716https://repositorio.unal.edu.co/bitstream/unal/50493/1/40991-184698-1-SP.pdfdc5304143eeab41401f18ef21812ed39MD5140991-227056-1-PB.pdfapplication/pdf784322https://repositorio.unal.edu.co/bitstream/unal/50493/2/40991-227056-1-PB.pdfdbb73d88c5dd62d010f9257a34f022b9MD52THUMBNAIL40991-184698-1-SP.pdf.jpg40991-184698-1-SP.pdf.jpgGenerated Thumbnailimage/jpeg7506https://repositorio.unal.edu.co/bitstream/unal/50493/3/40991-184698-1-SP.pdf.jpg4cc973b37c612eed12532b6b459fbc42MD5340991-227056-1-PB.pdf.jpg40991-227056-1-PB.pdf.jpgGenerated Thumbnailimage/jpeg9531https://repositorio.unal.edu.co/bitstream/unal/50493/4/40991-227056-1-PB.pdf.jpgf800c4d30771d091286229877256e3c0MD54unal/50493oai:repositorio.unal.edu.co:unal/504932022-12-20 23:06:09.35Repositorio Institucional Universidad Nacional de Colombiarepositorio_nal@unal.edu.co
dc.title.spa.fl_str_mv Monte carlo simulation of epitaxial growth of gainassb films
title Monte carlo simulation of epitaxial growth of gainassb films
spellingShingle Monte carlo simulation of epitaxial growth of gainassb films
Computational simulation
Kinetic Monte Carlo
Ising model
liquid phase epitaxy
GaInAsSb
title_short Monte carlo simulation of epitaxial growth of gainassb films
title_full Monte carlo simulation of epitaxial growth of gainassb films
title_fullStr Monte carlo simulation of epitaxial growth of gainassb films
title_full_unstemmed Monte carlo simulation of epitaxial growth of gainassb films
title_sort Monte carlo simulation of epitaxial growth of gainassb films
dc.creator.fl_str_mv Morales, Jheison Alejandro
Ríos-Olaya, Manuel Eduardo
Tirado Mejia, Liliana
dc.contributor.author.spa.fl_str_mv Morales, Jheison Alejandro
Ríos-Olaya, Manuel Eduardo
Tirado Mejia, Liliana
dc.subject.proposal.spa.fl_str_mv Computational simulation
Kinetic Monte Carlo
Ising model
liquid phase epitaxy
GaInAsSb
topic Computational simulation
Kinetic Monte Carlo
Ising model
liquid phase epitaxy
GaInAsSb
description Material engineering finds an important support on simulation methods. The study of semiconductors growth techniques through simulation allows the determination of the influence of some growth parameters on the film properties. Experimentally, the variations of these parameters are difficult due to the high experimental demands and expenses. In this work we present the numerical simulation of the epitaxial growth of GaInAsSb by three methods. Devices based on this semiconductor material are thermophotovoltaic generators. The solid-on-solid approximation was used, considering the unit cell formed by the four constituent elements, in the establish proportions according to the choose stoichiometry. Through the Kinetic Monte Carlo method we obtained a high coincidence between the simulated film morphology and the obtained in the experimentally grown films.
publishDate 2014
dc.date.issued.spa.fl_str_mv 2014-10-24
dc.date.accessioned.spa.fl_str_mv 2019-06-29T10:21:19Z
dc.date.available.spa.fl_str_mv 2019-06-29T10:21:19Z
dc.type.spa.fl_str_mv Artículo de revista
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_2df8fbb1
dc.type.driver.spa.fl_str_mv info:eu-repo/semantics/article
dc.type.version.spa.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.coar.spa.fl_str_mv http://purl.org/coar/resource_type/c_6501
dc.type.coarversion.spa.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.content.spa.fl_str_mv Text
dc.type.redcol.spa.fl_str_mv http://purl.org/redcol/resource_type/ART
format http://purl.org/coar/resource_type/c_6501
status_str publishedVersion
dc.identifier.uri.none.fl_str_mv https://repositorio.unal.edu.co/handle/unal/50493
dc.identifier.eprints.spa.fl_str_mv http://bdigital.unal.edu.co/44490/
url https://repositorio.unal.edu.co/handle/unal/50493
http://bdigital.unal.edu.co/44490/
dc.language.iso.spa.fl_str_mv spa
language spa
dc.relation.spa.fl_str_mv http://revistas.unal.edu.co/index.php/dyna/article/view/40991
dc.relation.ispartof.spa.fl_str_mv Universidad Nacional de Colombia Revistas electrónicas UN Dyna
Dyna
dc.relation.ispartofseries.none.fl_str_mv Dyna; Vol. 81, núm. 187 (2014); 184-192 DYNA; Vol. 81, núm. 187 (2014); 184-192 2346-2183 0012-7353
dc.relation.references.spa.fl_str_mv Morales, Jheison Alejandro and Ríos-Olaya, Manuel Eduardo and Tirado Mejia, Liliana (2014) Monte carlo simulation of epitaxial growth of gainassb films. Dyna; Vol. 81, núm. 187 (2014); 184-192 DYNA; Vol. 81, núm. 187 (2014); 184-192 2346-2183 0012-7353 .
dc.rights.spa.fl_str_mv Derechos reservados - Universidad Nacional de Colombia
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.rights.license.spa.fl_str_mv Atribución-NoComercial 4.0 Internacional
dc.rights.uri.spa.fl_str_mv http://creativecommons.org/licenses/by-nc/4.0/
dc.rights.accessrights.spa.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv Atribución-NoComercial 4.0 Internacional
Derechos reservados - Universidad Nacional de Colombia
http://creativecommons.org/licenses/by-nc/4.0/
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.mimetype.spa.fl_str_mv application/pdf
dc.publisher.spa.fl_str_mv Universidad Nacional de Colombia Sede Medellín
institution Universidad Nacional de Colombia
bitstream.url.fl_str_mv https://repositorio.unal.edu.co/bitstream/unal/50493/1/40991-184698-1-SP.pdf
https://repositorio.unal.edu.co/bitstream/unal/50493/2/40991-227056-1-PB.pdf
https://repositorio.unal.edu.co/bitstream/unal/50493/3/40991-184698-1-SP.pdf.jpg
https://repositorio.unal.edu.co/bitstream/unal/50493/4/40991-227056-1-PB.pdf.jpg
bitstream.checksum.fl_str_mv dc5304143eeab41401f18ef21812ed39
dbb73d88c5dd62d010f9257a34f022b9
4cc973b37c612eed12532b6b459fbc42
f800c4d30771d091286229877256e3c0
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
MD5
repository.name.fl_str_mv Repositorio Institucional Universidad Nacional de Colombia
repository.mail.fl_str_mv repositorio_nal@unal.edu.co
_version_ 1814089761979105280