Monte carlo simulation of epitaxial growth of gainassb films
Material engineering finds an important support on simulation methods. The study of semiconductors growth techniques through simulation allows the determination of the influence of some growth parameters on the film properties. Experimentally, the variations of these parameters are difficult due to...
- Autores:
-
Morales, Jheison Alejandro
Ríos-Olaya, Manuel Eduardo
Tirado Mejia, Liliana
- Tipo de recurso:
- Article of journal
- Fecha de publicación:
- 2014
- Institución:
- Universidad Nacional de Colombia
- Repositorio:
- Universidad Nacional de Colombia
- Idioma:
- spa
- OAI Identifier:
- oai:repositorio.unal.edu.co:unal/50493
- Acceso en línea:
- https://repositorio.unal.edu.co/handle/unal/50493
http://bdigital.unal.edu.co/44490/
- Palabra clave:
- Computational simulation
Kinetic Monte Carlo
Ising model
liquid phase epitaxy
GaInAsSb
- Rights
- openAccess
- License
- Atribución-NoComercial 4.0 Internacional