Monte carlo simulation of epitaxial growth of gainassb films
Material engineering finds an important support on simulation methods. The study of semiconductors growth techniques through simulation allows the determination of the influence of some growth parameters on the film properties. Experimentally, the variations of these parameters are difficult due to...
- Autores:
-
Morales, Jheison Alejandro
Ríos-Olaya, Manuel Eduardo
Tirado Mejia, Liliana
- Tipo de recurso:
- Article of journal
- Fecha de publicación:
- 2014
- Institución:
- Universidad Nacional de Colombia
- Repositorio:
- Universidad Nacional de Colombia
- Idioma:
- spa
- OAI Identifier:
- oai:repositorio.unal.edu.co:unal/50493
- Acceso en línea:
- https://repositorio.unal.edu.co/handle/unal/50493
http://bdigital.unal.edu.co/44490/
- Palabra clave:
- Computational simulation
Kinetic Monte Carlo
Ising model
liquid phase epitaxy
GaInAsSb
- Rights
- openAccess
- License
- Atribución-NoComercial 4.0 Internacional
| Summary: | Material engineering finds an important support on simulation methods. The study of semiconductors growth techniques through simulation allows the determination of the influence of some growth parameters on the film properties. Experimentally, the variations of these parameters are difficult due to the high experimental demands and expenses. In this work we present the numerical simulation of the epitaxial growth of GaInAsSb by three methods. Devices based on this semiconductor material are thermophotovoltaic generators. The solid-on-solid approximation was used, considering the unit cell formed by the four constituent elements, in the establish proportions according to the choose stoichiometry. Through the Kinetic Monte Carlo method we obtained a high coincidence between the simulated film morphology and the obtained in the experimentally grown films. |
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