Study of the influence of the interfaces on the properties of devices based on La1−xSrxMnO3

Abstract. Developing devices to save information, like the magnetoresistive random access memories (MRAM), is a wide area of research now days. The manganites are among those materials to be used for this purpose. The parent compound is the LaMnO3 which can be doped with a divalent alkaline earth me...