Gaas/algaas nanoheterostructures: simulation and application on high mobility transistors

This work analyses the features of GaAs/AlGaAs heterostructure, highlighting semiconductor junction properties. Charge confinement was produced when two materials having different band-gap were fixed; such high electron concentration is called two-dimensional electron gas (2DEG). Device simulation for smart integrated systems (DESSIS) is simulation software which uses physical models and robust numerical methods for simulating semiconductor devices and 3-5 element heterostructures. Results for different heterostructure doping profiles and voltages are presented in this work.  High electron mobility transistors (HEMTs) are one of the most important applications for heterostructures; they work on 30 to 300 GHz frequency ranges. These transistors are simulated in this work; a 1 A/mm2 high current density was obtained in the channel, such value being comparable to other values reported for similar transistors.

• Autores: Rodríguez, Eduardo Martín; González R., Estrella
• Tipo de recurso: Article of journal
• Fecha de publicación: 2011
• Institución: Universidad Nacional de Colombia
• Repositorio: Universidad Nacional de Colombia
• Idioma: spa
• OAI Identifier: oai:repositorio.unal.edu.co:unal/33480
• Acceso en línea: https://repositorio.unal.edu.co/handle/unal/33480; http://bdigital.unal.edu.co/23560/; http://bdigital.unal.edu.co/23560/2/; http://bdigital.unal.edu.co/23560/3/
• Palabra clave: HEMT; heteroestructuras; DESSIS; simulación.; HEMT; heterostructure; DESSIS; simulation.
• Rights: openAccess
• License: Atribución-NoComercial 4.0 Internacional