Gaas/algaas nanoheterostructures: simulation and application on high mobility transistors

This work analyses the features of GaAs/AlGaAs heterostructure, highlighting semiconductor junction properties. Charge confinement was produced when two materials having different band-gap were fixed; such high electron concentration is called two-dimensional electron gas (2DEG). Device simulation f...

Full description

Autores:
Rodríguez, Eduardo Martín
González R., Estrella
Tipo de recurso:
Article of journal
Fecha de publicación:
2011
Institución:
Universidad Nacional de Colombia
Repositorio:
Universidad Nacional de Colombia
Idioma:
spa
OAI Identifier:
oai:repositorio.unal.edu.co:unal/33480
Acceso en línea:
https://repositorio.unal.edu.co/handle/unal/33480
http://bdigital.unal.edu.co/23560/
http://bdigital.unal.edu.co/23560/2/
http://bdigital.unal.edu.co/23560/3/
Palabra clave:
HEMT
heteroestructuras
DESSIS
simulación.
HEMT
heterostructure
DESSIS
simulation.
Rights
openAccess
License
Atribución-NoComercial 4.0 Internacional