Efecto de las propiedades fotoeléctricas de películas semiconductoras de óxidos mixtos de bi-nb-m-o (m = al, fe, ga, in) en la producción de hidrógeno por fotoelectrólisis de soluciones acuosas de fenol

Autores:

Ropero Vega, José Luis

Tipo de recurso:

http://purl.org/coar/version/c_b1a7d7d4d402bcce

Fecha de publicación:

2016

Institución:

Universidad Industrial de Santander

Repositorio:

Repositorio UIS

Idioma:

spa

OAI Identifier:: oai:noesis.uis.edu.co:20.500.14071/35549

Acceso en línea:: https://noesis.uis.edu.co/handle/20.500.14071/35549
https://noesis.uis.edu.co

Palabra clave:: Sol-Gel
Dip-Coating
Caracterización Estructural
Fotoelectroquímica
Fotoelectrocatálisis.
In this research work
the preparation
structural characterization
photo-electrochemical characterization and photoelectrolytic evaluation of mixed oxide semiconductor films of Bi-Nb-M-O (M = Al
Fe
Ga
In) was studied
focused on the simultaneously oxidation of phenol and hydrogen production. In our previous work
it was found that these materials have visible light absorption properties and they were active in the photocatalytic degradation of methyl orange and the hydrogen production by photoelectrolysis of cyanide solutions. However
it had not been possible to correlate the structural properties of the films with their activity so far
which it is necessary to understand its operation and it will allow designing new semiconductor materials for these applications. The films were obtained from sol precursors prepared by sol-gel and deposited on AISI/SAE 304 stainless steel plates by dip-coating technique. The structural properties of the films were evaluated by SEM-EDS
XPS and XRD. The photoelectrochemical characterization was carried out by cyclic voltammetry
linear voltammetry
open circuit potential and photocurrent measurements. Finally
the activity of the films was evaluated in the photoelectrolysis of aqueous solutions of phenol in order to oxidize this compound and carrying out the hydrogen production simultaneously. The results show that the films have similar photoelectrochemical properties to bismuth oxide (III) with variations due to the presence of different metals (Nb
Al
Fe
Ga
In). All films exhibit activity in the photoelectrolysis of aqueous solutions of phenol and their efficiency is related to a sum of effects as the amount and type of oxides present
the band-gap
the positions of the valence and conduction bands and the charge transport properties.

Rights

License: Attribution-NonCommercial 4.0 International (CC BY-NC 4.0)

Efecto de las propiedades fotoeléctricas de películas semiconductoras de óxidos mixtos de bi-nb-m-o (m = al, fe, ga, in) en la producción de hidrógeno por fotoelectrólisis de soluciones acuosas de fenol

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