Stress effects on shallow-donor impurity states in symmetrical GaAs/AlxGa1_xAs double quantum wells

ABSTRACT: The effects of the compressive stress on the binding energy and the density of shallow-donor impurity states in symmetrical GaAs/AlxGa12xAs double quantum wells are calculated using a variational procedure within the effective-mass approximation. Results are for different well and barrier...

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Autores:

Raigoza Bohórquez, Nicolás Fernando
Morales Aramburo, Álvaro Luis
Montes Barahona, Augusto León
Porras Montenegro, Nelson
Duque Echeverri, Carlos Alberto

Tipo de recurso:

Article of investigation

Fecha de publicación:

2004

Institución:

Universidad de Antioquia

Repositorio:

Repositorio UdeA

Idioma:

eng

OAI Identifier:

oai:bibliotecadigital.udea.edu.co:10495/8387

Acceso en línea:

http://hdl.handle.net/10495/8387

Palabra clave:

Efectos de estrés
Estados de impurezas
Pozos cuánticos

Rights

openAccess

License

Atribución-NoComercial-SinDerivadas 2.5 Colombia