Pressure-induced metal-insulator transition and absence of magnetic order in FeGa3 from a first-principles study

ABSTRACT: The intermetallic compound FeGa3 is a narrow-gap semiconductor with a measured gap between 0.2 and 0.6 eV. The presence of iron d states on the top of the valence band and on the bottom of the conduction band, together with its moderate electronic correlation (U/W ∼ 0.6), have led to the q...

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Autores:
Osorio Guillén, Jorge Mario
Larrauri Pizarro, Yohel D.
Dalpian, Gustavo Martini
Tipo de recurso:
Article of investigation
Fecha de publicación:
2012
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/8635
Acceso en línea:
http://hdl.handle.net/10495/8635
Palabra clave:
Transición metal-aislante
Orden magnético
Estructura electrónica
Teoría Funcional de la Densidad
Rights
openAccess
License
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