Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates a...
- Autores:
-
Yesilgul, Unal
Ungan, Fatih
Duque Echeverri, Carlos Alberto
Kasapoglu, Esin
Sari, H.
Sokmen, Ismail
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2012
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/13127
- Acceso en línea:
- http://hdl.handle.net/10495/13127
- Palabra clave:
- Intense laser fields
Laser-dressed potential
Superlattices
Intensidad del campo del láser
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia
| Summary: | ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates an additional geometric confinement on the electronic states. Numerical results show that when tuning the strength of the laser field significant changes come in the electronic energy levels and density of states. |
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