Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates a...
- Autores:
-
Yesilgul, Unal
Ungan, Fatih
Duque Echeverri, Carlos Alberto
Kasapoglu, Esin
Sari, H.
Sokmen, Ismail
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2012
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/13127
- Acceso en línea:
- http://hdl.handle.net/10495/13127
- Palabra clave:
- Intense laser fields
Laser-dressed potential
Superlattices
Intensidad del campo del láser
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia