Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications
ABSTRACT: In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variatio...
- Autores:
-
Gil Corrales, John Alexander
Morales Aramburo, Alvaro Luis
Yücel, Melike Behiye
Kasapoglu, Esin
Duque Echeverri, Carlos Alberto
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2022
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/29752
- Acceso en línea:
- https://hdl.handle.net/10495/29752
- Palabra clave:
- Landauer, Rolf
Electrónica - aparatos e instrumentos
Electronic apparatus and appliances
GaAs/AlGaAs–InSe/InP superlattice
Transmission probability
Landauer formalism
Intense laser field
- Rights
- openAccess
- License
- Atribución 2.5 Colombia