Nonstoichiometry and hole doping in NiO

ABSTRACT: We have study by means of DFT+U and thermodynamic calculations the doping response of the p-type transparent oxide NiO. We have found from the calculated defect formation enthalpies that Ni vacancy, not the O interstitial, is the main source of nonstoichiometry in NiO. On the other hand, t...

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Autores:
Osorio Guillén, Jorge Mario
Lany, Stephan
Zunger, Alex
Tipo de recurso:
Article of investigation
Fecha de publicación:
2010
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/7998
Acceso en línea:
http://hdl.handle.net/10495/7998
http://dx.doi.org/10.1063/1.3295330
Palabra clave:
Óxido de níquel
Energías de formación
Defectos intrínsecos
Niveles de defectos
Dopaje de agujeros
Rights
openAccess
License
Atribución-NoComercial-SinDerivadas 2.5 Colombia