Hydrostatic pressure effects on the donor impurity-related photoionization cross-section in cylindrical-shaped GaAs-(Ga,Al)As quantum well-wires

ABSTRACT: Using a variational method the binding energy has been calculated for a shallow donor impurity and the donor-related photoionization cross-section in 1D and 0D GaAs low-dimensional systems. The dependence on the binding energy and the photoionization cross-section for a hydrogenic donor im...

Full description

Autores:

Cepeda Giraldo, Oscar
Porras Montenegro, Nelson
Duque Echeverri, Carlos Alberto

Tipo de recurso:

Article of investigation

Fecha de publicación:

2004

Institución:

Universidad de Antioquia

Repositorio:

Repositorio UdeA

Idioma:

eng

OAI Identifier:

oai:bibliotecadigital.udea.edu.co:10495/13332

Acceso en línea:

http://hdl.handle.net/10495/13332

Palabra clave:

GaAs/GaAlAs
Hydrostatic pressure
Photoionization
Quantum well wires

Rights

openAccess

License

Atribución 2.5 Colombia (CC BY 2.5 CO)