Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
ABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron...
- Autores:
-
Kuriplach, Jan
Morales Aramburo, Álvaro Luis
Dauwe, Charles
Segers, Danny
Sob, M.
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 1998
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/8289
- Acceso en línea:
- http://hdl.handle.net/10495/8289
- Palabra clave:
- Silicio
Silicon
Electrones
Electrons
Emisión de positrones
Positrons - emission
Espectroscopia
Spectroscopy
http://aims.fao.org/aos/agrovoc/c_14498
- Rights
- openAccess
- License
- https://creativecommons.org/licenses/by-nc-nd/4.0/
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| dc.title.spa.fl_str_mv |
Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons |
| title |
Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons |
| spellingShingle |
Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons Silicio Silicon Electrones Electrons Emisión de positrones Positrons - emission Espectroscopia Spectroscopy http://aims.fao.org/aos/agrovoc/c_14498 |
| title_short |
Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons |
| title_full |
Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons |
| title_fullStr |
Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons |
| title_full_unstemmed |
Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons |
| title_sort |
Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons |
| dc.creator.fl_str_mv |
Kuriplach, Jan Morales Aramburo, Álvaro Luis Dauwe, Charles Segers, Danny Sob, M. |
| dc.contributor.author.none.fl_str_mv |
Kuriplach, Jan Morales Aramburo, Álvaro Luis Dauwe, Charles Segers, Danny Sob, M. |
| dc.contributor.researchgroup.spa.fl_str_mv |
Grupo Estado Sólido |
| dc.subject.decs.none.fl_str_mv |
Silicio Silicon |
| topic |
Silicio Silicon Electrones Electrons Emisión de positrones Positrons - emission Espectroscopia Spectroscopy http://aims.fao.org/aos/agrovoc/c_14498 |
| dc.subject.lemb.none.fl_str_mv |
Electrones Electrons Emisión de positrones Positrons - emission |
| dc.subject.agrovoc.none.fl_str_mv |
Espectroscopia Spectroscopy |
| dc.subject.agrovocuri.none.fl_str_mv |
http://aims.fao.org/aos/agrovoc/c_14498 |
| description |
ABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron lifetime and positron binding energy to defects, we also calculate the momentum distribution of annihilation photons (MDAP) for high momenta, which has been recently shown to be a useful quantity for defect identification in semiconductors. The influence of atomic relaxations around defects on positron properties is also examined. Mutual differences among the high momentum parts of the MDAP for various defects studied are mostly considerable, which can be used for the experimental defect determination. |
| publishDate |
1998 |
| dc.date.issued.none.fl_str_mv |
1998 |
| dc.date.accessioned.none.fl_str_mv |
2017-09-21T19:35:48Z |
| dc.date.available.none.fl_str_mv |
2017-09-21T19:35:48Z |
| dc.type.spa.fl_str_mv |
Artículo de investigación |
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http://purl.org/coar/version/c_71e4c1898caa6e32 |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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https://purl.org/redcol/resource_type/ART |
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http://purl.org/coar/version/c_970fb48d4fbd8a85 |
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info:eu-repo/semantics/article |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
| dc.identifier.citation.spa.fl_str_mv |
Kuriplach, J., Morales Aramburo, A. L., Dauwe, C., Segers, D., & Sob, M. (1998). Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons. Physical Review B. 58(16), 10475-10483. |
| dc.identifier.issn.none.fl_str_mv |
1098-0121 |
| dc.identifier.uri.none.fl_str_mv |
http://hdl.handle.net/10495/8289 |
| dc.identifier.eissn.none.fl_str_mv |
1550-235X |
| identifier_str_mv |
Kuriplach, J., Morales Aramburo, A. L., Dauwe, C., Segers, D., & Sob, M. (1998). Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons. Physical Review B. 58(16), 10475-10483. 1098-0121 1550-235X |
| url |
http://hdl.handle.net/10495/8289 |
| dc.language.iso.spa.fl_str_mv |
eng |
| language |
eng |
| dc.relation.citationendpage.spa.fl_str_mv |
10483 |
| dc.relation.citationissue.spa.fl_str_mv |
16 |
| dc.relation.citationstartpage.spa.fl_str_mv |
10475 |
| dc.relation.citationvolume.spa.fl_str_mv |
58 |
| dc.relation.ispartofjournal.spa.fl_str_mv |
Physical review. B, Condensed matter and materials physics. |
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https://creativecommons.org/licenses/by-nc-nd/4.0/ |
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http://creativecommons.org/licenses/by-nc-nd/2.5/co/ |
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Atribución-NoComercial-SinDerivadas 2.5 Colombia |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
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The American Physical Society |
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Estados Unidos |
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Kuriplach, JanMorales Aramburo, Álvaro LuisDauwe, CharlesSegers, DannySob, M.Grupo Estado Sólido2017-09-21T19:35:48Z2017-09-21T19:35:48Z1998Kuriplach, J., Morales Aramburo, A. L., Dauwe, C., Segers, D., & Sob, M. (1998). Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons. Physical Review B. 58(16), 10475-10483.1098-0121http://hdl.handle.net/10495/82891550-235XABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron lifetime and positron binding energy to defects, we also calculate the momentum distribution of annihilation photons (MDAP) for high momenta, which has been recently shown to be a useful quantity for defect identification in semiconductors. The influence of atomic relaxations around defects on positron properties is also examined. Mutual differences among the high momentum parts of the MDAP for various defects studied are mostly considerable, which can be used for the experimental defect determination.COL0008138application/pdfengThe American Physical SocietyEstados Unidoshttps://creativecommons.org/licenses/by-nc-nd/4.0/http://creativecommons.org/licenses/by-nc-nd/2.5/co/Atribución-NoComercial-SinDerivadas 2.5 Colombiainfo:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electronsArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/version/c_71e4c1898caa6e32info:eu-repo/semantics/articleSilicioSiliconElectronesElectronsEmisión de positronesPositrons - emissionEspectroscopiaSpectroscopyhttp://aims.fao.org/aos/agrovoc/c_1449810483161047558Physical review. 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