Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons

ABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron...

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Autores:
Kuriplach, Jan
Morales Aramburo, Álvaro Luis
Dauwe, Charles
Segers, Danny
Sob, M.
Tipo de recurso:
Article of investigation
Fecha de publicación:
1998
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/8289
Acceso en línea:
http://hdl.handle.net/10495/8289
Palabra clave:
Electrones
Espectroscopia
Positrón
Silicio
Rights
openAccess
License
Atribución-NoComercial-SinDerivadas 2.5 Colombia
id UDEA2_46237af55176d8ba9af2930e2ac6292f
oai_identifier_str oai:bibliotecadigital.udea.edu.co:10495/8289
network_acronym_str UDEA2
network_name_str Repositorio UdeA
repository_id_str
dc.title.spa.fl_str_mv Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
title Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
spellingShingle Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
Electrones
Espectroscopia
Positrón
Silicio
title_short Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
title_full Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
title_fullStr Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
title_full_unstemmed Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
title_sort Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
dc.creator.fl_str_mv Kuriplach, Jan
Morales Aramburo, Álvaro Luis
Dauwe, Charles
Segers, Danny
Sob, M.
dc.contributor.author.none.fl_str_mv Kuriplach, Jan
Morales Aramburo, Álvaro Luis
Dauwe, Charles
Segers, Danny
Sob, M.
dc.subject.none.fl_str_mv Electrones
Espectroscopia
Positrón
Silicio
topic Electrones
Espectroscopia
Positrón
Silicio
description ABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron lifetime and positron binding energy to defects, we also calculate the momentum distribution of annihilation photons (MDAP) for high momenta, which has been recently shown to be a useful quantity for defect identification in semiconductors. The influence of atomic relaxations around defects on positron properties is also examined. Mutual differences among the high momentum parts of the MDAP for various defects studied are mostly considerable, which can be used for the experimental defect determination.
publishDate 1998
dc.date.issued.none.fl_str_mv 1998
dc.date.accessioned.none.fl_str_mv 2017-09-21T19:35:48Z
dc.date.available.none.fl_str_mv 2017-09-21T19:35:48Z
dc.type.spa.fl_str_mv info:eu-repo/semantics/article
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http://purl.org/coar/version/c_71e4c1898caa6e32
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dc.identifier.citation.spa.fl_str_mv Kuriplach, J., Morales Aramburo, A. L., Dauwe, C., Segers, D., & Sob, M. (1998). Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons. Physical Review B. 58(16), 10475-10483.
dc.identifier.issn.none.fl_str_mv 1098-0121
dc.identifier.uri.none.fl_str_mv http://hdl.handle.net/10495/8289
dc.identifier.eissn.none.fl_str_mv 1550-235X
identifier_str_mv Kuriplach, J., Morales Aramburo, A. L., Dauwe, C., Segers, D., & Sob, M. (1998). Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons. Physical Review B. 58(16), 10475-10483.
1098-0121
1550-235X
url http://hdl.handle.net/10495/8289
dc.language.iso.spa.fl_str_mv eng
language eng
dc.rights.*.fl_str_mv Atribución-NoComercial-SinDerivadas 2.5 Colombia
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rights_invalid_str_mv Atribución-NoComercial-SinDerivadas 2.5 Colombia
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eu_rights_str_mv openAccess
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dc.publisher.spa.fl_str_mv The American Physical Society
dc.publisher.group.spa.fl_str_mv Grupo Estado Sólido
dc.publisher.place.spa.fl_str_mv Estados Unidos
institution Universidad de Antioquia
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spelling Kuriplach, JanMorales Aramburo, Álvaro LuisDauwe, CharlesSegers, DannySob, M.2017-09-21T19:35:48Z2017-09-21T19:35:48Z1998Kuriplach, J., Morales Aramburo, A. L., Dauwe, C., Segers, D., & Sob, M. (1998). Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons. Physical Review B. 58(16), 10475-10483.1098-0121http://hdl.handle.net/10495/82891550-235XABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron lifetime and positron binding energy to defects, we also calculate the momentum distribution of annihilation photons (MDAP) for high momenta, which has been recently shown to be a useful quantity for defect identification in semiconductors. The influence of atomic relaxations around defects on positron properties is also examined. Mutual differences among the high momentum parts of the MDAP for various defects studied are mostly considerable, which can be used for the experimental defect determination.application/pdfengThe American Physical SocietyGrupo Estado SólidoEstados Unidosinfo:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARTArtículo de investigaciónhttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/version/c_71e4c1898caa6e32Atribución-NoComercial-SinDerivadas 2.5 Colombiainfo:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/2.5/co/http://purl.org/coar/access_right/c_abf2https://creativecommons.org/licenses/by-nc-nd/4.0/ElectronesEspectroscopiaPositrónSilicioVacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electronsPhysical review. B, Condensed matter and materials physics.10475104835816CC-LICENSElicense_urllicense_urlArtículo de investigacióntext/plain; charset=utf-849http://bibliotecadigital.udea.edu.co/bitstream/10495/8289/2/license_url4afdbb8c545fd630ea7db775da747b2fMD52license_textlicense_texttext/html; charset=utf-80http://bibliotecadigital.udea.edu.co/bitstream/10495/8289/3/license_textd41d8cd98f00b204e9800998ecf8427eMD53license_rdflicense_rdfapplication/rdf+xml; charset=utf-80http://bibliotecadigital.udea.edu.co/bitstream/10495/8289/4/license_rdfd41d8cd98f00b204e9800998ecf8427eMD54ORIGINALMoralesAlvaro_1998_VacanciesComplexesSilicon.pdfMoralesAlvaro_1998_VacanciesComplexesSilicon.pdfArtículo de investigaciónapplication/pdf153584http://bibliotecadigital.udea.edu.co/bitstream/10495/8289/1/MoralesAlvaro_1998_VacanciesComplexesSilicon.pdf9194fadfbb890ff464e4bedca865d1c0MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://bibliotecadigital.udea.edu.co/bitstream/10495/8289/5/license.txt8a4605be74aa9ea9d79846c1fba20a33MD5510495/8289oai:bibliotecadigital.udea.edu.co:10495/82892021-05-16 11:46:58.314Repositorio Institucional Universidad de Antioquiaandres.perez@udea.edu.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