Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
ABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron...
- Autores:
-
Kuriplach, Jan
Morales Aramburo, Álvaro Luis
Dauwe, Charles
Segers, Danny
Sob, M.
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 1998
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/8289
- Acceso en línea:
- http://hdl.handle.net/10495/8289
- Palabra clave:
- Electrones
Espectroscopia
Positrón
Silicio
- Rights
- openAccess
- License
- Atribución-NoComercial-SinDerivadas 2.5 Colombia