Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons

ABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron...

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Autores:
Kuriplach, Jan
Morales Aramburo, Álvaro Luis
Dauwe, Charles
Segers, Danny
Sob, M.
Tipo de recurso:
Article of investigation
Fecha de publicación:
1998
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/8289
Acceso en línea:
http://hdl.handle.net/10495/8289
Palabra clave:
Electrones
Espectroscopia
Positrón
Silicio
Rights
openAccess
License
Atribución-NoComercial-SinDerivadas 2.5 Colombia