Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons

ABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron...

Full description

Autores:

Kuriplach, Jan
Morales Aramburo, Álvaro Luis
Dauwe, Charles
Segers, Danny
Sob, M.

Tipo de recurso:

Article of investigation

Fecha de publicación:

1998

Institución:

Universidad de Antioquia

Repositorio:

Repositorio UdeA

Idioma:

eng

OAI Identifier:

oai:bibliotecadigital.udea.edu.co:10495/8289

Acceso en línea:

http://hdl.handle.net/10495/8289

Palabra clave:

Electrones
Espectroscopia
Positrón
Silicio

Rights

openAccess

License

Atribución-NoComercial-SinDerivadas 2.5 Colombia