Binding energy and density of shallow impurity states in GaAs–(Ga, Al)As quantum wells : effects of an applied hydrostatic stress

ABSTRACT: The effects of hydrostatic stress on the binding energy and the density of shallow-donor and shallow-acceptor impurity states in a GaAs–(Ga, Al)As quantum well are calculated using a variational procedure within the effective-mass approximation. Results are for different well widths and hy...