Shallow-donor impurity in coupled GaAs/Ga(1-x)Al(x)As quantum well wires: hydrostatic pressure and applied electric field effects

ABSTRACT: In this work we study the binding energy of the ground state for hydrogenic donor impurity in laterally coupled GaAs/Ga1 xAlxAs double quantum well wires, considering the effects of hydrostatic pressure and under the influence of a growthdirection applied electric field. We have used a var...

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Autores:
Duque Echeverri, Carlos Alberto
Tipo de recurso:
Article of investigation
Fecha de publicación:
2010
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/13204
Acceso en línea:
http://hdl.handle.net/10495/13204
Palabra clave:
Pressure effects
Quantum well wires
Semiconductor
Rights
openAccess
License
Atribución 2.5 Colombia (CC BY 2.5 CO)