Shallow-donor impurity in coupled GaAs/Ga(1-x)Al(x)As quantum well wires: hydrostatic pressure and applied electric field effects
ABSTRACT: In this work we study the binding energy of the ground state for hydrogenic donor impurity in laterally coupled GaAs/Ga1 xAlxAs double quantum well wires, considering the effects of hydrostatic pressure and under the influence of a growthdirection applied electric field. We have used a var...
- Autores:
-
Duque Echeverri, Carlos Alberto
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2010
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/13204
- Acceso en línea:
- http://hdl.handle.net/10495/13204
- Palabra clave:
- Pressure effects
Quantum well wires
Semiconductor
- Rights
- openAccess
- License
- Atribución 2.5 Colombia (CC BY 2.5 CO)