The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We h...
- Autores:
-
Duque Echeverri, Carlos Alberto
Ungan, F.
Kasapoglu, E.
Yesilgul, U.
Kasapoğlu, Esin
Sökmen, Ismail
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2011
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/31007
- Acceso en línea:
- https://hdl.handle.net/10495/31007
- Palabra clave:
- Pozos cuánticos
Quantum wells
Lasers
- Rights
- openAccess
- License
- http://creativecommons.org/licenses/by/2.5/co/
| Summary: | ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides. |
|---|