The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well

ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We h...

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Autores:
Duque Echeverri, Carlos Alberto
Ungan, F.
Kasapoglu, E.
Yesilgul, U.
Kasapoğlu, Esin
Sökmen, Ismail
Tipo de recurso:
Article of investigation
Fecha de publicación:
2011
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/31007
Acceso en línea:
https://hdl.handle.net/10495/31007
Palabra clave:
Pozos cuánticos
Quantum wells
Lasers
Rights
openAccess
License
http://creativecommons.org/licenses/by/2.5/co/