Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure

ABSTRACT: The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ − X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ − X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1−xAlxAs quantum wells.

• Autores: López Ríos, Sonia Yaneth; Mora Ramos, Miguel Eduardo; Duque Echeverri, Carlos Alberto
• Tipo de recurso: Article of investigation
• Fecha de publicación: 2008
• Institución: Universidad de Antioquia
• Repositorio: Repositorio UdeA
• Idioma: eng
• OAI Identifier: oai:bibliotecadigital.udea.edu.co:10495/31001
• Acceso en línea: https://hdl.handle.net/10495/31001; https://www.springer.com/journal/10051
• Palabra clave: Pozos cuánticos; Quantum wells; III-V semiconductors
• Rights: openAccess
• License: http://creativecommons.org/licenses/by/2.5/co/