Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure

ABSTRACT: The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy tra...

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Autores:
López Ríos, Sonia Yaneth
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
Tipo de recurso:
Article of investigation
Fecha de publicación:
2008
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/31001
Acceso en línea:
https://hdl.handle.net/10495/31001
https://www.springer.com/journal/10051
Palabra clave:
Pozos cuánticos
Quantum wells
III-V semiconductors
Rights
openAccess
License
http://creativecommons.org/licenses/by/2.5/co/