Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO

ABSTRACT: The doping response of the prototypical transparent oxides NiO (p-type), ZnO (n-type), and MgO (insulating) is caused by spontaneous formation of compensating centers, leading to Fermi-level pinning at critical Fermi energies. We study the doping principles in these oxides by first-princip...

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Autores:
Lany, Stephan
Osorio Guillén, Jorge Mario
Zunger, Alex
Tipo de recurso:
Article of investigation
Fecha de publicación:
2007
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/8384
Acceso en línea:
http://hdl.handle.net/10495/8384
Palabra clave:
Asimetría
Dopaje (Semiconductores)
Electrones
Óxidos
Rights
openAccess
License
Atribución-NoComercial-SinDerivadas 2.5 Colombia