Closed equations for the design of class f amplifiers
This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65...
- Autores:
- Tipo de recurso:
- http://purl.org/coar/resource_type/c_6645
- Fecha de publicación:
- 2015
- Institución:
- Universidad Pedagógica y Tecnológica de Colombia
- Repositorio:
- RiUPTC: Repositorio Institucional UPTC
- Idioma:
- spa
- OAI Identifier:
- oai:repositorio.uptc.edu.co:001/10203
- Acceso en línea:
- https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267
https://repositorio.uptc.edu.co/handle/001/10203
- Palabra clave:
- GaN-HEMT
power amplifier
high efficiency
HEMTs
microwave amplifier.
GaN-HEMT
amplificador de potencia
alta eficiencia
HEMTs
amplificador de microondas.
- Rights
- License
- Derechos de autor 2015 REVISTA DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓN
id |
REPOUPTC2_98a7bf8b487581baf2aebb84c73349ac |
---|---|
oai_identifier_str |
oai:repositorio.uptc.edu.co:001/10203 |
network_acronym_str |
REPOUPTC2 |
network_name_str |
RiUPTC: Repositorio Institucional UPTC |
repository_id_str |
|
spelling |
2015-08-152024-07-05T18:03:49Z2024-07-05T18:03:49Zhttps://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/326710.19053/20278306.3267https://repositorio.uptc.edu.co/handle/001/10203This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65 %, small signal gain of 14.2 dB and saturated output power of 41 dBm, using sinusoidal excitation. The drain voltage and current waveforms are coherent with theory and the results in continuous-wave are outstanding.Este artículo muestra una metodología para el diseño de amplificadores clase F, basada en ecuaciones cerradas que permiten el cálculo directo de la red de acople de salida. Como demostración, un prototipo ha sido realizado usando el dispositivo GaN HEMT CGH40010 de Cree, obteniendo una eficiencia de drenaje máxima de 65%, ganancia a pequeña señal de 14.2 dB y potencia de salida en saturación de 41 dBm, usando excitación tipo sinusoidal. Las formas de onda obtenidas para el voltaje y la corriente de drenaje son coherentes con la teoría y los resultados en onda-continua son sobresalientes.application/pdfspaspaUniversidad Pedagógica y Tecnológica de Colombiahttps://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267/3484Derechos de autor 2015 REVISTA DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓNhttp://purl.org/coar/access_right/c_abf146http://purl.org/coar/access_right/c_abf2Revista de Investigación, Desarrollo e Innovación; Vol. 6 No. 1 (2015): July-December; 85-92Revista de Investigación, Desarrollo e Innovación; Vol. 6 Núm. 1 (2015): Julio-Diciembre; 85-922389-94172027-8306GaN-HEMTpower amplifierhigh efficiencyHEMTsmicrowave amplifier.GaN-HEMTamplificador de potenciaalta eficienciaHEMTsamplificador de microondas.Closed equations for the design of class f amplifiersEcuaciones cerradas para el diseño de amplificadores clase Finfo:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6645http://purl.org/coar/resource_type/c_2df8fbb1info:eu-repo/semantics/publishedVersionhttp://purl.org/coar/version/c_970fb48d4fbd8a229http://purl.org/coar/version/c_970fb48d4fbd8a85Moreno-Rubio, Jorge JuliánRodríguez-Mora, Javier FranciscoCely-Angarita, Nydia EsperanzaAngarita-Malaver, Edison Ferney001/10203oai:repositorio.uptc.edu.co:001/102032025-07-18 11:51:29.293metadata.onlyhttps://repositorio.uptc.edu.coRepositorio Institucional UPTCrepositorio.uptc@uptc.edu.co |
dc.title.en-US.fl_str_mv |
Closed equations for the design of class f amplifiers |
dc.title.es-ES.fl_str_mv |
Ecuaciones cerradas para el diseño de amplificadores clase F |
title |
Closed equations for the design of class f amplifiers |
spellingShingle |
Closed equations for the design of class f amplifiers GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. GaN-HEMT amplificador de potencia alta eficiencia HEMTs amplificador de microondas. |
title_short |
Closed equations for the design of class f amplifiers |
title_full |
Closed equations for the design of class f amplifiers |
title_fullStr |
Closed equations for the design of class f amplifiers |
title_full_unstemmed |
Closed equations for the design of class f amplifiers |
title_sort |
Closed equations for the design of class f amplifiers |
dc.subject.en-US.fl_str_mv |
GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. |
topic |
GaN-HEMT power amplifier high efficiency HEMTs microwave amplifier. GaN-HEMT amplificador de potencia alta eficiencia HEMTs amplificador de microondas. |
dc.subject.es-ES.fl_str_mv |
GaN-HEMT amplificador de potencia alta eficiencia HEMTs amplificador de microondas. |
description |
This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65 %, small signal gain of 14.2 dB and saturated output power of 41 dBm, using sinusoidal excitation. The drain voltage and current waveforms are coherent with theory and the results in continuous-wave are outstanding. |
publishDate |
2015 |
dc.date.accessioned.none.fl_str_mv |
2024-07-05T18:03:49Z |
dc.date.available.none.fl_str_mv |
2024-07-05T18:03:49Z |
dc.date.none.fl_str_mv |
2015-08-15 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.coar.fl_str_mv |
http://purl.org/coar/resource_type/c_2df8fbb1 |
dc.type.coarversion.fl_str_mv |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
dc.type.coar.spa.fl_str_mv |
http://purl.org/coar/resource_type/c_6645 |
dc.type.version.spa.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.coarversion.spa.fl_str_mv |
http://purl.org/coar/version/c_970fb48d4fbd8a229 |
format |
http://purl.org/coar/resource_type/c_6645 |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267 10.19053/20278306.3267 |
dc.identifier.uri.none.fl_str_mv |
https://repositorio.uptc.edu.co/handle/001/10203 |
url |
https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267 https://repositorio.uptc.edu.co/handle/001/10203 |
identifier_str_mv |
10.19053/20278306.3267 |
dc.language.none.fl_str_mv |
spa |
dc.language.iso.spa.fl_str_mv |
spa |
language |
spa |
dc.relation.none.fl_str_mv |
https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267/3484 |
dc.rights.es-ES.fl_str_mv |
Derechos de autor 2015 REVISTA DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓN |
dc.rights.coar.fl_str_mv |
http://purl.org/coar/access_right/c_abf2 |
dc.rights.coar.spa.fl_str_mv |
http://purl.org/coar/access_right/c_abf146 |
rights_invalid_str_mv |
Derechos de autor 2015 REVISTA DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓN http://purl.org/coar/access_right/c_abf146 http://purl.org/coar/access_right/c_abf2 |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.es-ES.fl_str_mv |
Universidad Pedagógica y Tecnológica de Colombia |
dc.source.en-US.fl_str_mv |
Revista de Investigación, Desarrollo e Innovación; Vol. 6 No. 1 (2015): July-December; 85-92 |
dc.source.es-ES.fl_str_mv |
Revista de Investigación, Desarrollo e Innovación; Vol. 6 Núm. 1 (2015): Julio-Diciembre; 85-92 |
dc.source.none.fl_str_mv |
2389-9417 2027-8306 |
institution |
Universidad Pedagógica y Tecnológica de Colombia |
repository.name.fl_str_mv |
Repositorio Institucional UPTC |
repository.mail.fl_str_mv |
repositorio.uptc@uptc.edu.co |
_version_ |
1839633832610889728 |