Closed equations for the design of class f amplifiers

This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65...

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Autores:
Tipo de recurso:
http://purl.org/coar/resource_type/c_6645
Fecha de publicación:
2015
Institución:
Universidad Pedagógica y Tecnológica de Colombia
Repositorio:
RiUPTC: Repositorio Institucional UPTC
Idioma:
spa
OAI Identifier:
oai:repositorio.uptc.edu.co:001/10203
Acceso en línea:
https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267
https://repositorio.uptc.edu.co/handle/001/10203
Palabra clave:
GaN-HEMT
power amplifier
high efficiency
HEMTs
microwave amplifier.
GaN-HEMT
amplificador de potencia
alta eficiencia
HEMTs
amplificador de microondas.
Rights
License
Derechos de autor 2015 REVISTA DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓN