Closed equations for the design of class f amplifiers
This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65...
- Autores:
- Tipo de recurso:
- http://purl.org/coar/resource_type/c_6645
- Fecha de publicación:
- 2015
- Institución:
- Universidad Pedagógica y Tecnológica de Colombia
- Repositorio:
- RiUPTC: Repositorio Institucional UPTC
- Idioma:
- spa
- OAI Identifier:
- oai:repositorio.uptc.edu.co:001/10203
- Acceso en línea:
- https://revistas.uptc.edu.co/index.php/investigacion_duitama/article/view/3267
https://repositorio.uptc.edu.co/handle/001/10203
- Palabra clave:
- GaN-HEMT
power amplifier
high efficiency
HEMTs
microwave amplifier.
GaN-HEMT
amplificador de potencia
alta eficiencia
HEMTs
amplificador de microondas.
- Rights
- License
- Derechos de autor 2015 REVISTA DE INVESTIGACIÓN, DESARROLLO E INNOVACIÓN
| Summary: | This paper shows a methodology for designing class F amplifiers based on closed equations that allow the direct calculation of the output matching network. For the sake of proving, a prototype has been carried out using the Cree´s device GaN HEMT CGH40010, obtaining a maximum drain efficiency of 65 %, small signal gain of 14.2 dB and saturated output power of 41 dBm, using sinusoidal excitation. The drain voltage and current waveforms are coherent with theory and the results in continuous-wave are outstanding. |
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