Electronic Structure of GaAs and AlAs using a Hamiltonian Tight-Binding sp3s∗

We calculate the electronic states in volume for GaAs and AlAs in Zinc-Blenda structure using the Tight-Binding (TB) method. The TB Hamiltonian was constructed using a base of s, p and s∗ orbitals. Thes∗ orbitals represent excited states with equal symmetry as the s orbitals. Carrying out the numeri...

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Autores:

Tipo de recurso:

Fecha de publicación:

2021

Institución:

Universidad Pedagógica y Tecnológica de Colombia

Repositorio:

RiUPTC: Repositorio Institucional UPTC

Idioma:

spa

OAI Identifier:

oai:repositorio.uptc.edu.co:001/15314

Acceso en línea:

https://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/12612
https://repositorio.uptc.edu.co/handle/001/15314

Palabra clave:

Tight-Binding, relaciones de dispersión, densidad de estados.
Tight-Binding, dispersion relations, density of states.

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