Compact model with physical parameter prediction capability for RF amplifiers

In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements...

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Autores:
Tipo de recurso:
Fecha de publicación:
2019
Institución:
Universidad Pedagógica y Tecnológica de Colombia
Repositorio:
RiUPTC: Repositorio Institucional UPTC
Idioma:
spa
OAI Identifier:
oai:repositorio.uptc.edu.co:001/14239
Acceso en línea:
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132
https://repositorio.uptc.edu.co/handle/001/14239
Palabra clave:
electronic components
field effect transistors
microwave circuits
microwave measurements
semiconductor device modeling
amplificadores de potencia RF
GaAs
microondas
movilidad electrónica
transistores de efecto de campo
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License
http://purl.org/coar/access_right/c_abf286
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dc.title.en-US.fl_str_mv Compact model with physical parameter prediction capability for RF amplifiers
dc.title.es-ES.fl_str_mv Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF
title Compact model with physical parameter prediction capability for RF amplifiers
spellingShingle Compact model with physical parameter prediction capability for RF amplifiers
electronic components
field effect transistors
microwave circuits
microwave measurements
semiconductor device modeling
amplificadores de potencia RF
GaAs
microondas
movilidad electrónica
transistores de efecto de campo
title_short Compact model with physical parameter prediction capability for RF amplifiers
title_full Compact model with physical parameter prediction capability for RF amplifiers
title_fullStr Compact model with physical parameter prediction capability for RF amplifiers
title_full_unstemmed Compact model with physical parameter prediction capability for RF amplifiers
title_sort Compact model with physical parameter prediction capability for RF amplifiers
dc.subject.en-US.fl_str_mv electronic components
field effect transistors
microwave circuits
microwave measurements
semiconductor device modeling
topic electronic components
field effect transistors
microwave circuits
microwave measurements
semiconductor device modeling
amplificadores de potencia RF
GaAs
microondas
movilidad electrónica
transistores de efecto de campo
dc.subject.es-ES.fl_str_mv amplificadores de potencia RF
GaAs
microondas
movilidad electrónica
transistores de efecto de campo
description In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements, data processing has been performed, deriving a new equation with the ability to reproduce both types of behavior with high precision and at different points of operation. Consequently, the work provides a new model based on a non-linear four-terminal circuit. The relevance of this model is the ability to predict physical effects such as frequency dispersion and electronic mobility of the semiconductor device. This is important because the frequency dispersion is one of the most important problems of modern communication systems that generates memory effects limiting the ability to transmit signals of high bandwidth. The fact of being able to predict the electronic mobility and the frequency dispersion help the circuit designer to improve their quality and design time. It also allows the RF component manufacturing industry to save production costs as this technique allows to predict the behavior of the circuits before implementing them. The presented methodology has been validated through the implementation of a power amplifier in LDMOS technology using the proposed technique. The proposed model is open since the proposed new technique can be implemented in any of the conventional models currently used in the industrial and academic field.
publishDate 2019
dc.date.accessioned.none.fl_str_mv 2024-07-05T19:11:50Z
dc.date.available.none.fl_str_mv 2024-07-05T19:11:50Z
dc.date.none.fl_str_mv 2019-04-02
dc.type.en-US.fl_str_mv research
dc.type.es-ES.fl_str_mv investigación
dc.type.none.fl_str_mv info:eu-repo/semantics/article
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_2df8fbb1
dc.type.coarversion.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.version.spa.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.coarversion.spa.fl_str_mv http://purl.org/coar/version/c_970fb48d4fbd8a369
status_str publishedVersion
dc.identifier.none.fl_str_mv https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132
10.19053/01211129.v28.n51.2019.9132
dc.identifier.uri.none.fl_str_mv https://repositorio.uptc.edu.co/handle/001/14239
url https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132
https://repositorio.uptc.edu.co/handle/001/14239
identifier_str_mv 10.19053/01211129.v28.n51.2019.9132
dc.language.none.fl_str_mv spa
dc.language.iso.spa.fl_str_mv spa
language spa
dc.relation.none.fl_str_mv https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7628
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7902
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7915
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.rights.coar.spa.fl_str_mv http://purl.org/coar/access_right/c_abf286
rights_invalid_str_mv http://purl.org/coar/access_right/c_abf286
http://purl.org/coar/access_right/c_abf2
dc.format.none.fl_str_mv application/pdf
application/xml
dc.coverage.en-US.fl_str_mv N.A.
dc.coverage.es-ES.fl_str_mv N.A.
dc.publisher.en-US.fl_str_mv Universidad Pedagógica y Tecnológica de Colombia
dc.source.en-US.fl_str_mv Revista Facultad de Ingeniería; Vol. 28 No. 51 (2019); 73-87
dc.source.es-ES.fl_str_mv Revista Facultad de Ingeniería; Vol. 28 Núm. 51 (2019); 73-87
dc.source.none.fl_str_mv 2357-5328
0121-1129
institution Universidad Pedagógica y Tecnológica de Colombia
repository.name.fl_str_mv Repositorio Institucional UPTC
repository.mail.fl_str_mv repositorio.uptc@uptc.edu.co
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spelling 2019-04-022024-07-05T19:11:50Z2024-07-05T19:11:50Zhttps://revistas.uptc.edu.co/index.php/ingenieria/article/view/913210.19053/01211129.v28.n51.2019.9132https://repositorio.uptc.edu.co/handle/001/14239In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements, data processing has been performed, deriving a new equation with the ability to reproduce both types of behavior with high precision and at different points of operation. Consequently, the work provides a new model based on a non-linear four-terminal circuit. The relevance of this model is the ability to predict physical effects such as frequency dispersion and electronic mobility of the semiconductor device. This is important because the frequency dispersion is one of the most important problems of modern communication systems that generates memory effects limiting the ability to transmit signals of high bandwidth. The fact of being able to predict the electronic mobility and the frequency dispersion help the circuit designer to improve their quality and design time. It also allows the RF component manufacturing industry to save production costs as this technique allows to predict the behavior of the circuits before implementing them. The presented methodology has been validated through the implementation of a power amplifier in LDMOS technology using the proposed technique. The proposed model is open since the proposed new technique can be implemented in any of the conventional models currently used in the industrial and academic field.En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el comportamiento estático y dinámico de dichos dispositivos. En base a las medidas se ha realizado un procesamiento de datos derivando una nueva ecuación con la capacidad de reproducir ambos tipos de comportamiento con elevada precisión y en diferentes puntos de operación. Consecuentemente el trabajo aporta un nuevo modelo basado en un circuito no lineal de cuatro terminales. La relevancia de este modelo es la capacidad de predecir los efectos físicos como la dispersión frecuencial y la movilidad electrónica del dispositivo semiconductor. Esto es importante pues la dispersión frecuencial es uno de los problemas más importantes de los sistemas de comunicación modernos que genera efectos memoria limitando la capacidad de transmitir señales de gran ancho de banda. El hecho de poder predecir la movilidad electrónica y la dispersión frecuencial ayudan al diseñador de circuitos a mejorar su calidad y tiempo de diseño. Además, permite a la industria de fabricación de componentes de RF ahorrar costos de producción pues esta técnica permite predecir el comportamiento de los circuitos antes de implementarlos. La metodología para la obtención del modelo compacto ha sido validada a través de la implementación de un amplificador de potencia en tecnología LDMOS usando la técnica propuesta. El modelo propuesto es abierto puesto que la nueva técnica propuesta se puede implementar en cualquiera de los modelos convencionales usados actualmente en el ámbito industrial y académico.application/pdfapplication/xmlspaspaUniversidad Pedagógica y Tecnológica de Colombiahttps://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7628https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7902https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132/7915Revista Facultad de Ingeniería; Vol. 28 No. 51 (2019); 73-87Revista Facultad de Ingeniería; Vol. 28 Núm. 51 (2019); 73-872357-53280121-1129electronic componentsfield effect transistorsmicrowave circuitsmicrowave measurementssemiconductor device modelingamplificadores de potencia RFGaAsmicroondasmovilidad electrónicatransistores de efecto de campoCompact model with physical parameter prediction capability for RF amplifiersModelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RFresearchinvestigacióninfo:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_2df8fbb1info:eu-repo/semantics/publishedVersionhttp://purl.org/coar/version/c_970fb48d4fbd8a369http://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/access_right/c_abf286http://purl.org/coar/access_right/c_abf2N.A.N.A.Rafael-Valdivia, Guillermo001/14239oai:repositorio.uptc.edu.co:001/142392025-07-18 11:53:44.315metadata.onlyhttps://repositorio.uptc.edu.coRepositorio Institucional UPTCrepositorio.uptc@uptc.edu.co