Compact model with physical parameter prediction capability for RF amplifiers

In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements...

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Autores:
Tipo de recurso:
Fecha de publicación:
2019
Institución:
Universidad Pedagógica y Tecnológica de Colombia
Repositorio:
RiUPTC: Repositorio Institucional UPTC
Idioma:
spa
OAI Identifier:
oai:repositorio.uptc.edu.co:001/14239
Acceso en línea:
https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132
https://repositorio.uptc.edu.co/handle/001/14239
Palabra clave:
electronic components
field effect transistors
microwave circuits
microwave measurements
semiconductor device modeling
amplificadores de potencia RF
GaAs
microondas
movilidad electrónica
transistores de efecto de campo
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License
http://purl.org/coar/access_right/c_abf286