Compact model with physical parameter prediction capability for RF amplifiers
In this work presents an analysis of field effect transistors using pulsed voltage sources has been presented. Microwave measurements have been made in HEMT's and LDMOS technology devices highlighting the difference between the static and dynamic behavior of these devices. Based on measurements...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2019
- Institución:
- Universidad Pedagógica y Tecnológica de Colombia
- Repositorio:
- RiUPTC: Repositorio Institucional UPTC
- Idioma:
- spa
- OAI Identifier:
- oai:repositorio.uptc.edu.co:001/14239
- Acceso en línea:
- https://revistas.uptc.edu.co/index.php/ingenieria/article/view/9132
https://repositorio.uptc.edu.co/handle/001/14239
- Palabra clave:
- electronic components
field effect transistors
microwave circuits
microwave measurements
semiconductor device modeling
amplificadores de potencia RF
GaAs
microondas
movilidad electrónica
transistores de efecto de campo
- Rights
- License
- http://purl.org/coar/access_right/c_abf286