CNx thin films grown by PLD at different temperatures
Carbon Nitride (CNx) thin films were grown by pulsed laser deposition using a Nd:YAG laser (1064 nm, 500mJ), in a graphite target (99.999%) on Si(100) substrate for three different temperatures 21, 50 and 200 °C, in a nitrogen atmosphere at constant pressure of 2,66 Pa. The FTIR’s analysis made to t...
- Autores:
-
Jorge Luis Gallego Cano; Universidad Tecnológica de Pereira, Colombia
Deisy Ramírez Vinasco; Universidad Tecnológica de Pereira, Colombia
Henry Riascos Landázuri; Universidad Tecnológica de Pereira, Colombia
Leonid Ipaz; Universidad del Valle, Colombia
Juan Muñoz Saldaña; Instituto Politécnico Nacional, México
- Tipo de recurso:
- Fecha de publicación:
- 2011
- Institución:
- Universidad del Norte
- Repositorio:
- Repositorio Uninorte
- Idioma:
- spa
- OAI Identifier:
- oai:manglar.uninorte.edu.co:10584/4145
- Acceso en línea:
- http://rcientificas.uninorte.edu.co/index.php/ingenieria/article/view/2882
http://hdl.handle.net/10584/4145
- Palabra clave:
- Rights
- License
- http://purl.org/coar/access_right/c_abf2
| Summary: | Carbon Nitride (CNx) thin films were grown by pulsed laser deposition using a Nd:YAG laser (1064 nm, 500mJ), in a graphite target (99.999%) on Si(100) substrate for three different temperatures 21, 50 and 200 °C, in a nitrogen atmosphere at constant pressure of 2,66 Pa. The FTIR’s analysis made to the films, revealed the presence of active modes around 1108 cm-1, 1465 cm-1, 2270 cm-1, associated with the simple, double and triple bonding of CN, respectively. Chemical composition was studied by EDX analysis, low nitrogen contents were found between 3 and 6 at%. And the mechanical properties of the films were evaluated using nanoindentation technique. The highest hardness was 14 GPa at 200 ºC substrate temperature. |
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