Dangling-to-Interstitial Oxygen Transition and Its Modifications of the Electronic Structure in Few-Layer Phosphorene

In this work, oxidation processes are correlated with the current-voltage characteristics of few-layer black phosphorus obtained by liquid-phase exfoliation. Black phosphorous (BP), a room-temperature p-type semiconductor, exhibits an anomalous switching behavior between 373 and 448 K. The anomalous...

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Autores:

Tipo de recurso:

Fecha de publicación:

2020

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/5934

Acceso en línea:

http://hdl.handle.net/11407/5934

Palabra clave:

Black Phosphorus
Calculations
Current voltage characteristics
Electric conductance
Electric resistance
Electronic structure
Ohmic contacts
Oxidation
Oxygen
Phosphorus
Electrical conductance
Electrical resistance measurement
Electrical resistances
Electronic differences
First-principles calculation
Interstitial oxygen
Ohmic contact formation
P type semiconductor
Activation energy

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http://purl.org/coar/access_right/c_16ec