Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to...

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Fecha de publicación:: 2019

Institución:: Universidad de Medellín

Repositorio:: Repositorio UDEM

Idioma:: eng

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network_acronym_str	REPOUDEM2
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repository_id_str
dc.title.none.fl_str_mv	Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
title	Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
spellingShingle	Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW background impurity modulation doping SiGe quantum wells Binding energy Nanotechnology Si-Ge alloys Background impurities Energy structures Impurity binding energy Modulation doping Quantum well structures SiGe quantum wells THz frequencies Tunable optical devices Semiconductor quantum wells
title_short	Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
title_full	Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
title_fullStr	Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
title_full_unstemmed	Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
title_sort	Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
dc.subject.none.fl_str_mv	background impurity modulation doping SiGe quantum wells Binding energy Nanotechnology Si-Ge alloys Background impurities Energy structures Impurity binding energy Modulation doping Quantum well structures SiGe quantum wells THz frequencies Tunable optical devices Semiconductor quantum wells
topic	background impurity modulation doping SiGe quantum wells Binding energy Nanotechnology Si-Ge alloys Background impurities Energy structures Impurity binding energy Modulation doping Quantum well structures SiGe quantum wells THz frequencies Tunable optical devices Semiconductor quantum wells
description	Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region. © 2019 IEEE.
publishDate	2019
dc.date.accessioned.none.fl_str_mv	2020-04-29T14:54:04Z
dc.date.available.none.fl_str_mv	2020-04-29T14:54:04Z
dc.date.none.fl_str_mv	2019
dc.type.eng.fl_str_mv	Conference Paper
dc.type.coarversion.fl_str_mv	http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.coar.fl_str_mv	http://purl.org/coar/resource_type/c_2df8fbb1
dc.type.driver.none.fl_str_mv	info:eu-repo/semantics/article
dc.identifier.isbn.none.fl_str_mv	9781728120652
dc.identifier.uri.none.fl_str_mv	http://hdl.handle.net/11407/5801
dc.identifier.doi.none.fl_str_mv	10.1109/ELNANO.2019.8783451
identifier_str_mv	9781728120652 10.1109/ELNANO.2019.8783451
url	http://hdl.handle.net/11407/5801
dc.language.iso.none.fl_str_mv	eng
language	eng
dc.relation.isversionof.none.fl_str_mv	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85070899466&doi=10.1109%2fELNANO.2019.8783451&partnerID=40&md5=45e762c2bc5f25eca48ac26c0298da6a
dc.relation.citationstartpage.none.fl_str_mv	177
dc.relation.citationendpage.none.fl_str_mv	180
dc.relation.references.none.fl_str_mv	Bastard, G., Hydrogenic impurity states in a quantum well: A simple model (1981) Phys. Rev. B, 24, pp. 4714 Kleiner, R., Filling the terahertz gap (2007) Science, 318 (5854), pp. 1254-1255. , Nov, Nov 2007 Tulupenko, V., Abramov, A., Al Akimovet Belichenko, V.Y., The influence of the ionized impurity delta-layer potential in the quantum well on impurity binding energy (2011) Journal of Applied Physics, 109, p. 064303 Tulupenko, V., Duque, C.A., Demedyuk, R., On the possibility of tuning the energy separation between space-quantized levels in a quantum well (2012) Philosophical Magazine Letters, 93, pp. 42-49 Tulupenko, V., Duque, C.A., Akimov, V., Demediuk, R., On intersubband absorption of radiation in delta-doped QWs (2015) Physica E: Low-dimensional Systems and Nanostructures, 74, pp. 400-406 Duque, C.A., Akimov, V., Demediuk, R., About possible THz modulator on the base of delta-doped QWs (2015) Superlattices Microstruct, 87, pp. 5-11. , November Blom, A., Odnoblyudov, M.A., Yassievich, I.N., Chao, K.-A., Donor states in modulation-doped Si/SiGe heterostructures (2003) Phys.Rev.B, 68, p. 165338 Shiraki, Y., Sakai, A., Fabrication technology of SiGe hetero-structures and their properties (2005) Surface Science Reports, 59 (7), pp. 153-207. , November Chaudhuri, S., Bajaj, K.K., Effect of nonparabolicity on the energy levels of hydrogenic donors in GaAs/GaAlAs quantum-well structures (1803) Phys. Rev. B, 29, p. 1984 Brum, J.A., Bastard, G., Guillemot, C., Screened Coulombic impurity bound states in semiconductor quantum wells (1984) Phys. Rev. B, 30, p. 905 Goh, K.E.J., Augarten, Y., Oberbeck, L., Simmons, M.Y., Enhancing electron transport in Si: P delta-doped devices by rapid thermal anneal (2008) Appl. Phys. Lett, 93, p. 142105 Curson, J.O.N., Hallam, T., Simmons, M.Y., Bilger, G., Clark, R.G., Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy (2004) Appl. Phys. Lett, 85, p. 1359 Rieger, M.M., Vogl, P., Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates (1993) Phys. Rev. B, 48, p. 14276 Vinter, B., Influence of charged impurities on Si inversion-layer electrons (1982) Phys. Rev. B, 26, p. 6808 Sasagawa, R., Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration (1998) Applied Physics Letters, 72 (6), pp. P.719. , February
dc.rights.coar.fl_str_mv	http://purl.org/coar/access_right/c_16ec
rights_invalid_str_mv	http://purl.org/coar/access_right/c_16ec
dc.publisher.none.fl_str_mv	Institute of Electrical and Electronics Engineers Inc.
dc.publisher.program.none.fl_str_mv	Facultad de Ciencias Básicas
dc.publisher.faculty.none.fl_str_mv	Facultad de Ciencias Básicas
publisher.none.fl_str_mv	Institute of Electrical and Electronics Engineers Inc.
dc.source.none.fl_str_mv	2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
institution	Universidad de Medellín
repository.name.fl_str_mv	Repositorio Institucional Universidad de Medellin
repository.mail.fl_str_mv	repositorio@udem.edu.co
_version_	1814159115236147200
spelling	20192020-04-29T14:54:04Z2020-04-29T14:54:04Z9781728120652http://hdl.handle.net/11407/580110.1109/ELNANO.2019.8783451Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region. © 2019 IEEE.engInstitute of Electrical and Electronics Engineers Inc.Facultad de Ciencias BásicasFacultad de Ciencias Básicashttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85070899466&doi=10.1109%2fELNANO.2019.8783451&partnerID=40&md5=45e762c2bc5f25eca48ac26c0298da6a177180Bastard, G., Hydrogenic impurity states in a quantum well: A simple model (1981) Phys. Rev. B, 24, pp. 4714Kleiner, R., Filling the terahertz gap (2007) Science, 318 (5854), pp. 1254-1255. , Nov, Nov 2007Tulupenko, V., Abramov, A., Al Akimovet Belichenko, V.Y., The influence of the ionized impurity delta-layer potential in the quantum well on impurity binding energy (2011) Journal of Applied Physics, 109, p. 064303Tulupenko, V., Duque, C.A., Demedyuk, R., On the possibility of tuning the energy separation between space-quantized levels in a quantum well (2012) Philosophical Magazine Letters, 93, pp. 42-49Tulupenko, V., Duque, C.A., Akimov, V., Demediuk, R., On intersubband absorption of radiation in delta-doped QWs (2015) Physica E: Low-dimensional Systems and Nanostructures, 74, pp. 400-406Duque, C.A., Akimov, V., Demediuk, R., About possible THz modulator on the base of delta-doped QWs (2015) Superlattices Microstruct, 87, pp. 5-11. , NovemberBlom, A., Odnoblyudov, M.A., Yassievich, I.N., Chao, K.-A., Donor states in modulation-doped Si/SiGe heterostructures (2003) Phys.Rev.B, 68, p. 165338Shiraki, Y., Sakai, A., Fabrication technology of SiGe hetero-structures and their properties (2005) Surface Science Reports, 59 (7), pp. 153-207. , NovemberChaudhuri, S., Bajaj, K.K., Effect of nonparabolicity on the energy levels of hydrogenic donors in GaAs/GaAlAs quantum-well structures (1803) Phys. Rev. B, 29, p. 1984Brum, J.A., Bastard, G., Guillemot, C., Screened Coulombic impurity bound states in semiconductor quantum wells (1984) Phys. Rev. B, 30, p. 905Goh, K.E.J., Augarten, Y., Oberbeck, L., Simmons, M.Y., Enhancing electron transport in Si: P delta-doped devices by rapid thermal anneal (2008) Appl. Phys. Lett, 93, p. 142105Curson, J.O.N., Hallam, T., Simmons, M.Y., Bilger, G., Clark, R.G., Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy (2004) Appl. Phys. Lett, 85, p. 1359Rieger, M.M., Vogl, P., Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates (1993) Phys. Rev. B, 48, p. 14276Vinter, B., Influence of charged impurities on Si inversion-layer electrons (1982) Phys. Rev. B, 26, p. 6808Sasagawa, R., Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration (1998) Applied Physics Letters, 72 (6), pp. P.719. , February2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedingsbackground impuritymodulation dopingSiGe quantum wellsBinding energyNanotechnologySi-Ge alloysBackground impuritiesEnergy structuresImpurity binding energyModulation dopingQuantum well structuresSiGe quantum wellsTHz frequenciesTunable optical devicesSemiconductor quantum wellsEffect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QWConference Paperinfo:eu-repo/semantics/articlehttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_2df8fbb1Tulupenko, V., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Akimov, V., Facultad de Ciencias Basicas, Universidad de Medellín, Medellín, Colombia; Demediuk, R., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Duque, C., Grupo de Materia Condensada-UdeA, Universidad de Antioquia, Medellin, Colombia; Fomina, O., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukraine; Sushchenko, D., Physics Department, Donbas State Engineering Academy, Kramatorsk, Ukrainehttp://purl.org/coar/access_right/c_16ecTulupenko V.Akimov V.Demediuk R.Duque C.Fomina O.Sushchenko D.11407/5801oai:repository.udem.edu.co:11407/58012020-05-27 15:53:12.114Repositorio Institucional Universidad de Medellinrepositorio@udem.edu.co

Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

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