Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to...

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Autores:

Tipo de recurso:

Fecha de publicación:

2019

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/5801

Acceso en línea:

http://hdl.handle.net/11407/5801

Palabra clave:

background impurity
modulation doping
SiGe quantum wells
Binding energy
Nanotechnology
Si-Ge alloys
Background impurities
Energy structures
Impurity binding energy
Modulation doping
Quantum well structures
SiGe quantum wells
THz frequencies
Tunable optical devices
Semiconductor quantum wells

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http://purl.org/coar/access_right/c_16ec