Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2019
- Institución:
- Universidad de Medellín
- Repositorio:
- Repositorio UDEM
- Idioma:
- eng
- OAI Identifier:
- oai:repository.udem.edu.co:11407/5801
- Acceso en línea:
- http://hdl.handle.net/11407/5801
- Palabra clave:
- background impurity
modulation doping
SiGe quantum wells
Binding energy
Nanotechnology
Si-Ge alloys
Background impurities
Energy structures
Impurity binding energy
Modulation doping
Quantum well structures
SiGe quantum wells
THz frequencies
Tunable optical devices
Semiconductor quantum wells
- Rights
- License
- http://purl.org/coar/access_right/c_16ec
| Summary: | Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region. © 2019 IEEE. |
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