Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding e...

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Fecha de publicación:
2016
Institución:
Universidad de Medellín
Repositorio:
Repositorio UDEM
Idioma:
eng
OAI Identifier:
oai:repository.udem.edu.co:11407/2273
Acceso en línea:
http://hdl.handle.net/11407/2273
Palabra clave:
Binding energy
Electric fields
Electronic structure
Excitons
Gallium arsenide
Nanocrystals
Nonlinear optics
Quantum theory
Semiconducting gallium
Semiconductor quantum dots
Dc electric field
Donor and acceptor
Electronic structure and optical properties
Exciton energies
Excitonic state
Non-linear optical properties
Photoluminescence peak
Shallow impurities
Optical properties
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restrictedAccess
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http://purl.org/coar/access_right/c_16ec
id REPOUDEM2_a0978932548cdf788d95ad18dca5ef4d
oai_identifier_str oai:repository.udem.edu.co:11407/2273
network_acronym_str REPOUDEM2
network_name_str Repositorio UDEM
repository_id_str
spelling 2016-06-23T13:04:59Z2016-06-23T13:04:59Z20169214526http://hdl.handle.net/11407/227310.1016/j.physb.2015.12.045Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed. © 2015 Elsevier B.V. All rights reserved.engElsevierhttp://www.sciencedirect.com/science/article/pii/S0921452615303768Physica B: Condensed Matter Volume 484, 1 March 2016, Pages 95–108ScopusElectronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity statesArticle in Pressinfo:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_2df8fbb1info:eu-repo/semantics/restrictedAccesshttp://purl.org/coar/access_right/c_16ecGrupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, ColombiaDepartment of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk, UkraineCentro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, MexicoCumhuriyet University, Physics Department, 58140 Sivas, TurkeyDepartment of Physics, Dokuz Eylül University, 35160 Buca, Izmir, TurkeyUniversidad de Medellín, Carrera 87 No 30-65 Medellín, ColombiaCumhuriyet University, Faculty of Technology, Deparment of Optical Engineering, 58140 Sivas, TurkeyTiutiunnyk A.Akimov V.Tulupenko V.Mora-Ramos M.E.Kasapoglu E.Ungan F.Sökmen I.Morales A.L.Duque C.A.Binding energyElectric fieldsElectronic structureExcitonsGallium arsenideNanocrystalsNonlinear opticsQuantum theorySemiconducting galliumSemiconductor quantum dotsDc electric fieldDonor and acceptorElectronic structure and optical propertiesExciton energiesExcitonic stateNon-linear optical propertiesPhotoluminescence peakShallow impuritiesOptical properties11407/2273oai:repository.udem.edu.co:11407/22732020-05-27 16:37:22.675Repositorio Institucional Universidad de Medellinrepositorio@udem.edu.co
dc.title.spa.fl_str_mv Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
title Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
spellingShingle Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
Binding energy
Electric fields
Electronic structure
Excitons
Gallium arsenide
Nanocrystals
Nonlinear optics
Quantum theory
Semiconducting gallium
Semiconductor quantum dots
Dc electric field
Donor and acceptor
Electronic structure and optical properties
Exciton energies
Excitonic state
Non-linear optical properties
Photoluminescence peak
Shallow impurities
Optical properties
title_short Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
title_full Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
title_fullStr Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
title_full_unstemmed Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
title_sort Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
dc.contributor.affiliation.spa.fl_str_mv Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk, Ukraine
Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico
Cumhuriyet University, Physics Department, 58140 Sivas, Turkey
Department of Physics, Dokuz Eylül University, 35160 Buca, Izmir, Turkey
Universidad de Medellín, Carrera 87 No 30-65 Medellín, Colombia
Cumhuriyet University, Faculty of Technology, Deparment of Optical Engineering, 58140 Sivas, Turkey
dc.subject.keyword.eng.fl_str_mv Binding energy
Electric fields
Electronic structure
Excitons
Gallium arsenide
Nanocrystals
Nonlinear optics
Quantum theory
Semiconducting gallium
Semiconductor quantum dots
Dc electric field
Donor and acceptor
Electronic structure and optical properties
Exciton energies
Excitonic state
Non-linear optical properties
Photoluminescence peak
Shallow impurities
Optical properties
topic Binding energy
Electric fields
Electronic structure
Excitons
Gallium arsenide
Nanocrystals
Nonlinear optics
Quantum theory
Semiconducting gallium
Semiconductor quantum dots
Dc electric field
Donor and acceptor
Electronic structure and optical properties
Exciton energies
Excitonic state
Non-linear optical properties
Photoluminescence peak
Shallow impurities
Optical properties
description Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed. © 2015 Elsevier B.V. All rights reserved.
publishDate 2016
dc.date.accessioned.none.fl_str_mv 2016-06-23T13:04:59Z
dc.date.available.none.fl_str_mv 2016-06-23T13:04:59Z
dc.date.created.none.fl_str_mv 2016
dc.type.eng.fl_str_mv Article in Press
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_2df8fbb1
dc.type.driver.none.fl_str_mv info:eu-repo/semantics/article
dc.identifier.issn.none.fl_str_mv 9214526
dc.identifier.uri.none.fl_str_mv http://hdl.handle.net/11407/2273
dc.identifier.doi.none.fl_str_mv 10.1016/j.physb.2015.12.045
identifier_str_mv 9214526
10.1016/j.physb.2015.12.045
url http://hdl.handle.net/11407/2273
dc.language.iso.none.fl_str_mv eng
language eng
dc.relation.isversionof.spa.fl_str_mv http://www.sciencedirect.com/science/article/pii/S0921452615303768
dc.relation.ispartofen.eng.fl_str_mv Physica B: Condensed Matter Volume 484, 1 March 2016, Pages 95–108
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_16ec
dc.rights.accessrights.none.fl_str_mv info:eu-repo/semantics/restrictedAccess
eu_rights_str_mv restrictedAccess
rights_invalid_str_mv http://purl.org/coar/access_right/c_16ec
dc.publisher.spa.fl_str_mv Elsevier
dc.source.spa.fl_str_mv Scopus
institution Universidad de Medellín
repository.name.fl_str_mv Repositorio Institucional Universidad de Medellin
repository.mail.fl_str_mv repositorio@udem.edu.co
_version_ 1814159159439917056

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