Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding e...

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Autores:

Tipo de recurso:

Fecha de publicación:

2016

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/2273

Acceso en línea:

http://hdl.handle.net/11407/2273

Palabra clave:

Binding energy
Electric fields
Electronic structure
Excitons
Gallium arsenide
Nanocrystals
Nonlinear optics
Quantum theory
Semiconducting gallium
Semiconductor quantum dots
Dc electric field
Donor and acceptor
Electronic structure and optical properties
Exciton energies
Excitonic state
Non-linear optical properties
Photoluminescence peak
Shallow impurities
Optical properties

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restrictedAccess

License

http://purl.org/coar/access_right/c_16ec