Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding e...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2016
- Institución:
- Universidad de Medellín
- Repositorio:
- Repositorio UDEM
- Idioma:
- eng
- OAI Identifier:
- oai:repository.udem.edu.co:11407/2273
- Acceso en línea:
- http://hdl.handle.net/11407/2273
- Palabra clave:
- Binding energy
Electric fields
Electronic structure
Excitons
Gallium arsenide
Nanocrystals
Nonlinear optics
Quantum theory
Semiconducting gallium
Semiconductor quantum dots
Dc electric field
Donor and acceptor
Electronic structure and optical properties
Exciton energies
Excitonic state
Non-linear optical properties
Photoluminescence peak
Shallow impurities
Optical properties
- Rights
- restrictedAccess
- License
- http://purl.org/coar/access_right/c_16ec
| Summary: | Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed. © 2015 Elsevier B.V. All rights reserved. |
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