Effects of hydrostatic pressure and electric field on the electron-related optical properties in GaAs multiple quantum well
The properties of the electronic structure of a finite-barrier semiconductor multiple quantum well are investigated taking into account the effects of the application of a static electric field and hydrostatic pressure. With the information of the allowed quasi-stationary energy states, the coeffici...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2017
- Institución:
- Universidad de Medellín
- Repositorio:
- Repositorio UDEM
- Idioma:
- eng
- OAI Identifier:
- oai:repository.udem.edu.co:11407/4273
- Acceso en línea:
- http://hdl.handle.net/11407/4273
- Palabra clave:
- Electric field
Hydrostatic pressure
Multiple quantum well
Optical properties
Electric fields
Electromagnetic wave absorption
Electronic structure
Equations of motion
Hydraulics
Hydrostatic pressure
Light absorption
Matrix algebra
Natural frequencies
Nonlinear equations
Nonlinear optics
Optical properties
Quantum optics
Refractive index
Semiconducting indium compounds
Density matrix equations
Gaas multiple quantum wells
Nonlinear contributions
Nonlinear optical absorption
Pressure induced effects
Refractive index changes
Rotating wave approximations
Static electric fields
Semiconductor quantum wells
- Rights
- License
- http://purl.org/coar/access_right/c_16ec