Lattice strain influence on conduction band nonparabolicity in GaAs and InAs: Application to intraband optical absorption in InGaAs-GaAs asymmetric step quantum wells

We use empirical sps

Autores:

Tipo de recurso:

Fecha de publicación:

2021

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/5892

Acceso en línea:

http://hdl.handle.net/11407/5892

Palabra clave:

Conduction bands
Energy gap
Gallium arsenide
Indium arsenide
Lattice constants
Light absorption
Optical lattices
Quantum theory
Semiconducting gallium
Semiconducting indium gallium arsenide
Semiconductor quantum wells
Spin orbit coupling
Valence bands
Zinc sulfide
Asymmetric quantum wells
Band nonparabolicity
Conduction-band state
Effective-mass equation
Excited energy level
Intraband transitions
Optical absorption coefficients
Tight-binding calculations
III-V semiconductors

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License

http://purl.org/coar/access_right/c_16ec