Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW
Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2016
- Institución:
- Universidad de Medellín
- Repositorio:
- Repositorio UDEM
- Idioma:
- eng
- OAI Identifier:
- oai:repository.udem.edu.co:11407/3140
- Acceso en línea:
- http://hdl.handle.net/11407/3140
- Palabra clave:
- Binding energy
Delta doping
Impurities
Quantum wells
Si0.8Ge0.2
- Rights
- restrictedAccess
- License
- http://purl.org/coar/access_right/c_16ec
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2017-05-12T16:05:53Z2017-05-12T16:05:53Z20163701972http://hdl.handle.net/11407/314010.1002/pssb.201600464Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.engWiley-VCH Verlaghttp://onlinelibrary.wiley.com/doi/10.1002/pssb.201600464/abstract;jsessionid=9C92A508C1156A6A8DAAEA5F8D37A0DE.f03t02Physica Status Solidi (B) Basic ResearchScopusBinding energyDelta dopingImpuritiesQuantum wellsSi0.8Ge0.2Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QWArticle in Pressinfo:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_2df8fbb1info:eu-repo/semantics/restrictedAccesshttp://purl.org/coar/access_right/c_16ecTulupenko, V., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombiaDuque, C.A., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombiaMorales, A.L., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombiaTiutiunnyk, A., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombia, Donbas State Engineering AcademyKramatorsk 84313UkraineDemediuk, R., Donbas State Engineering AcademyKramatorsk 84313UkraineDmytrychenko, T., Donbas State Engineering AcademyKramatorsk 84313UkraineFomina, O., Donbas State Engineering AcademyKramatorsk 84313UkraineAkimov, V., Departamento de Ciencias Basicas, Universidad de MedellínCarrera 87 No. 30-65 MedellínColombiaRestrepo, R.L., Universidad EIAEnvigadoColombiaMora-Ramos, M.E., Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 CuernavacaMorelos, MéxicoTulupenko V.Duque C.A.Morales A.L.Tiutiunnyk A.Demediuk R.Dmytrychenko T.Fomina O.Akimov V.Restrepo R.L.Mora-Ramos M.E.11407/3140oai:repository.udem.edu.co:11407/31402020-05-27 19:15:49.599Repositorio Institucional Universidad de Medellinrepositorio@udem.edu.co |
| dc.title.spa.fl_str_mv |
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW |
| title |
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW |
| spellingShingle |
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW Binding energy Delta doping Impurities Quantum wells Si0.8Ge0.2 |
| title_short |
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW |
| title_full |
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW |
| title_fullStr |
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW |
| title_full_unstemmed |
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW |
| title_sort |
Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW |
| dc.contributor.affiliation.spa.fl_str_mv |
Tulupenko, V., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombia Duque, C.A., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombia Morales, A.L., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombia Tiutiunnyk, A., Grupo de Materia Condensada-UdeA, Universidad de Antioquia UdeA, Calle 70 No. 52-21MedellínColombia, Donbas State Engineering AcademyKramatorsk 84313Ukraine Demediuk, R., Donbas State Engineering AcademyKramatorsk 84313Ukraine Dmytrychenko, T., Donbas State Engineering AcademyKramatorsk 84313Ukraine Fomina, O., Donbas State Engineering AcademyKramatorsk 84313Ukraine Akimov, V., Departamento de Ciencias Basicas, Universidad de MedellínCarrera 87 No. 30-65 MedellínColombia Restrepo, R.L., Universidad EIAEnvigadoColombia Mora-Ramos, M.E., Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 CuernavacaMorelos, México |
| dc.subject.spa.fl_str_mv |
Binding energy Delta doping Impurities Quantum wells Si0.8Ge0.2 |
| topic |
Binding energy Delta doping Impurities Quantum wells Si0.8Ge0.2 |
| description |
Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| publishDate |
2016 |
| dc.date.created.none.fl_str_mv |
2016 |
| dc.date.accessioned.none.fl_str_mv |
2017-05-12T16:05:53Z |
| dc.date.available.none.fl_str_mv |
2017-05-12T16:05:53Z |
| dc.type.eng.fl_str_mv |
Article in Press |
| dc.type.coar.fl_str_mv |
http://purl.org/coar/resource_type/c_2df8fbb1 |
| dc.type.driver.none.fl_str_mv |
info:eu-repo/semantics/article |
| dc.identifier.issn.none.fl_str_mv |
3701972 |
| dc.identifier.uri.none.fl_str_mv |
http://hdl.handle.net/11407/3140 |
| dc.identifier.doi.none.fl_str_mv |
10.1002/pssb.201600464 |
| identifier_str_mv |
3701972 10.1002/pssb.201600464 |
| url |
http://hdl.handle.net/11407/3140 |
| dc.language.iso.none.fl_str_mv |
eng |
| language |
eng |
| dc.relation.isversionof.spa.fl_str_mv |
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600464/abstract;jsessionid=9C92A508C1156A6A8DAAEA5F8D37A0DE.f03t02 |
| dc.relation.ispartofes.spa.fl_str_mv |
Physica Status Solidi (B) Basic Research |
| dc.rights.coar.fl_str_mv |
http://purl.org/coar/access_right/c_16ec |
| dc.rights.accessrights.none.fl_str_mv |
info:eu-repo/semantics/restrictedAccess |
| eu_rights_str_mv |
restrictedAccess |
| rights_invalid_str_mv |
http://purl.org/coar/access_right/c_16ec |
| dc.publisher.spa.fl_str_mv |
Wiley-VCH Verlag |
| dc.source.spa.fl_str_mv |
Scopus |
| institution |
Universidad de Medellín |
| repository.name.fl_str_mv |
Repositorio Institucional Universidad de Medellin |
| repository.mail.fl_str_mv |
repositorio@udem.edu.co |
| _version_ |
1814159262563172352 |