Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW
Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2016
- Institución:
- Universidad de Medellín
- Repositorio:
- Repositorio UDEM
- Idioma:
- eng
- OAI Identifier:
- oai:repository.udem.edu.co:11407/3140
- Acceso en línea:
- http://hdl.handle.net/11407/3140
- Palabra clave:
- Binding energy
Delta doping
Impurities
Quantum wells
Si0.8Ge0.2
- Rights
- restrictedAccess
- License
- http://purl.org/coar/access_right/c_16ec