Effect of lattice deformation on electronic and optical properties of CuGaSe2: Ab-initio calculations

In this study, we have investigated the effect of bi-axial, ?ab, and uni-axial, ?c, strains on the optoelectronic properties of chalcopyrite semiconductor CuGaSe2 through first-principles full potential linearized augmented plane wave method. These materials have recently attracted much interest wit...

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Autores:

Tipo de recurso:

Fecha de publicación:

2020

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/5791

Acceso en línea:

http://hdl.handle.net/11407/5791

Palabra clave:

Copper gallium selenide
Density functional theory
Electronic properties
First-principle calculations
Optical properties
Strain effect
Calculations
Copper compounds
Deformation
Electronic properties
Energy gap
Layered semiconductors
Optical lattices
Optical properties
Refractive index
Selenium compounds
Semiconducting gallium compounds
Semiconducting selenium compounds
Strain
Direct band gap semiconductors
Electronic and optical properties
Exchange-correlation potential
First principle calculations
Full potential linearized augmented plane wave method
Gallium selenides
Generalized gradient approximations
Strain effect
Density functional theory

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