Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field

The differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their dependencies on the size of the triangle,the influence of externally applied electri...

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Fecha de publicación:
2016
Institución:
Universidad de Medellín
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Repositorio UDEM
Idioma:
eng
OAI Identifier:
oai:repository.udem.edu.co:11407/2479
Acceso en línea:
http://hdl.handle.net/11407/2479
Palabra clave:
Eigenvalues and eigenfunctions
Electric fields
Nanocrystals
Point defects
Raman scattering
Semiconductor quantum dots
Diagonalizations
Differential cross section
Donor impurities
Electron Raman scattering
Impurity centers
Intermediate state
Linearly polarized
Mesoscopic and nanoscale systems
Electromagnetic wave scattering
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restrictedAccess
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http://purl.org/coar/access_right/c_16ec
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oai_identifier_str oai:repository.udem.edu.co:11407/2479
network_acronym_str REPOUDEM2
network_name_str Repositorio UDEM
repository_id_str
dc.title.spa.fl_str_mv Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
spellingShingle Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
Eigenvalues and eigenfunctions
Electric fields
Nanocrystals
Point defects
Raman scattering
Semiconductor quantum dots
Diagonalizations
Differential cross section
Donor impurities
Electron Raman scattering
Impurity centers
Intermediate state
Linearly polarized
Mesoscopic and nanoscale systems
Electromagnetic wave scattering
title_short Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title_full Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title_fullStr Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title_full_unstemmed Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
title_sort Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
dc.contributor.affiliation.spa.fl_str_mv Tiutiunnyk, A., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, Ukraine
Akimov, V., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, Ukraine, Universidad de Medellín, Carrera 87 No., Medellín, Colombia
Tulupenko, V., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, Ukraine
Mora-Ramos, M.E., Centro de Investigación en Ciencias,Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma delEstado de Morelos, Av. Universidad 1001, CP, Cuernavaca, Morelos, Mexico
Kasapoglu, E., Cumhuriyet University, PhysicsDepartment, Sivas, Turkey
Morales, A.L., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia
Duque, C.A., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia
dc.subject.keyword.eng.fl_str_mv Eigenvalues and eigenfunctions
Electric fields
Nanocrystals
Point defects
Raman scattering
Semiconductor quantum dots
Diagonalizations
Differential cross section
Donor impurities
Electron Raman scattering
Impurity centers
Intermediate state
Linearly polarized
Mesoscopic and nanoscale systems
Electromagnetic wave scattering
topic Eigenvalues and eigenfunctions
Electric fields
Nanocrystals
Point defects
Raman scattering
Semiconductor quantum dots
Diagonalizations
Differential cross section
Donor impurities
Electron Raman scattering
Impurity centers
Intermediate state
Linearly polarized
Mesoscopic and nanoscale systems
Electromagnetic wave scattering
description The differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their dependencies on the size of the triangle,the influence of externally applied electric field as well as the presence of an ionizeddonor center located at the triangle’s orthocenter. The calculations are made within theeffective mass and parabolic band approximations, with a diagonalization scheme beingapplied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incidentand secondary (scattered) radiation have been considered linearly-polarized along they-direction, coinciding with the direction of theapplied electric field. For the case with an impurity center, Raman scattering with theintermediate state energy below the initial state one has been found to show maximumdifferential cross-section more than by an order of magnitude bigger than that resultingfrom the scheme with lower intermediate state energy. The Raman gain has maximum magnitudearound 35 nm dot size andelectric field of 40 kV/cm forthe case without impurity and at maximum considered values of the input parameters for thecase with impurity. Values of Raman gain of the order of up to 104cm-1 are predicted in bothcases. © 2016, EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.
publishDate 2016
dc.date.accessioned.none.fl_str_mv 2016-07-27T20:27:54Z
dc.date.available.none.fl_str_mv 2016-07-27T20:27:54Z
dc.date.created.none.fl_str_mv 2016
dc.type.eng.fl_str_mv Article
dc.type.coar.fl_str_mv http://purl.org/coar/resource_type/c_6501
http://purl.org/coar/resource_type/c_2df8fbb1
dc.type.driver.none.fl_str_mv info:eu-repo/semantics/article
dc.identifier.issn.none.fl_str_mv 14346028
dc.identifier.uri.none.fl_str_mv http://hdl.handle.net/11407/2479
dc.identifier.doi.none.fl_str_mv 10.1140/epjb/e2016-70001-3
identifier_str_mv 14346028
10.1140/epjb/e2016-70001-3
url http://hdl.handle.net/11407/2479
dc.language.iso.none.fl_str_mv eng
language eng
dc.relation.isversionof.spa.fl_str_mv http://link.springer.com/article/10.1140%2Fepjb%2Fe2016-70001-3
dc.relation.ispartofen.eng.fl_str_mv The European Physical Journal B April 2016, 89:107
dc.rights.coar.fl_str_mv http://purl.org/coar/access_right/c_16ec
dc.rights.accessrights.none.fl_str_mv info:eu-repo/semantics/restrictedAccess
eu_rights_str_mv restrictedAccess
rights_invalid_str_mv http://purl.org/coar/access_right/c_16ec
dc.publisher.spa.fl_str_mv Springer Heidelberg
dc.source.spa.fl_str_mv Scopus
institution Universidad de Medellín
repository.name.fl_str_mv Repositorio Institucional Universidad de Medellin
repository.mail.fl_str_mv repositorio@udem.edu.co
_version_ 1814159188654292992
spelling 2016-07-27T20:27:54Z2016-07-27T20:27:54Z201614346028http://hdl.handle.net/11407/247910.1140/epjb/e2016-70001-3The differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their dependencies on the size of the triangle,the influence of externally applied electric field as well as the presence of an ionizeddonor center located at the triangle’s orthocenter. The calculations are made within theeffective mass and parabolic band approximations, with a diagonalization scheme beingapplied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incidentand secondary (scattered) radiation have been considered linearly-polarized along they-direction, coinciding with the direction of theapplied electric field. For the case with an impurity center, Raman scattering with theintermediate state energy below the initial state one has been found to show maximumdifferential cross-section more than by an order of magnitude bigger than that resultingfrom the scheme with lower intermediate state energy. The Raman gain has maximum magnitudearound 35 nm dot size andelectric field of 40 kV/cm forthe case without impurity and at maximum considered values of the input parameters for thecase with impurity. Values of Raman gain of the order of up to 104cm-1 are predicted in bothcases. © 2016, EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.engSpringer Heidelberghttp://link.springer.com/article/10.1140%2Fepjb%2Fe2016-70001-3The European Physical Journal B April 2016, 89:107ScopusElectron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric fieldArticleinfo:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://purl.org/coar/resource_type/c_2df8fbb1info:eu-repo/semantics/restrictedAccesshttp://purl.org/coar/access_right/c_16ecTiutiunnyk, A., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, UkraineAkimov, V., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, Ukraine, Universidad de Medellín, Carrera 87 No., Medellín, ColombiaTulupenko, V., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, Colombia, Department of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, UkraineMora-Ramos, M.E., Centro de Investigación en Ciencias,Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma delEstado de Morelos, Av. Universidad 1001, CP, Cuernavaca, Morelos, MexicoKasapoglu, E., Cumhuriyet University, PhysicsDepartment, Sivas, TurkeyMorales, A.L., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, ColombiaDuque, C.A., Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, ColombiaTiutiunnyk A.Akimov V.Tulupenko V.Mora-Ramos M.E.Kasapoglu E.Morales A.L.Duque C.A.Grupo de Materia Condensada-UdeA,Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad deAntioquia UdeA, Calle 70 No., Medellín, ColombiaDepartment of Physics, Donbass StateEngineering Academy, Shkadinova 72, Kramatorsk, UkraineUniversidad de Medellín, Carrera 87 No., Medellín, ColombiaCentro de Investigación en Ciencias,Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma delEstado de Morelos, Av. Universidad 1001, CP, Cuernavaca, Morelos, MexicoCumhuriyet University, PhysicsDepartment, Sivas, TurkeyEigenvalues and eigenfunctionsElectric fieldsNanocrystalsPoint defectsRaman scatteringSemiconductor quantum dotsDiagonalizationsDifferential cross sectionDonor impuritiesElectron Raman scatteringImpurity centersIntermediate stateLinearly polarizedMesoscopic and nanoscale systemsElectromagnetic wave scatteringThe differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their dependencies on the size of the triangle,the influence of externally applied electric field as well as the presence of an ionizeddonor center located at the triangle’s orthocenter. The calculations are made within theeffective mass and parabolic band approximations, with a diagonalization scheme beingapplied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incidentand secondary (scattered) radiation have been considered linearly-polarized along they-direction, coinciding with the direction of theapplied electric field. For the case with an impurity center, Raman scattering with theintermediate state energy below the initial state one has been found to show maximumdifferential cross-section more than by an order of magnitude bigger than that resultingfrom the scheme with lower intermediate state energy. The Raman gain has maximum magnitudearound 35 nm dot size andelectric field of 40 kV/cm forthe case without impurity and at maximum considered values of the input parameters for thecase with impurity. Values of Raman gain of the order of up to 104cm-1 are predicted in bothcases. © 2016, EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.11407/2479oai:repository.udem.edu.co:11407/24792020-05-27 17:50:20.339Repositorio Institucional Universidad de Medellinrepositorio@udem.edu.co

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