Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field

The differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their dependencies on the size of the triangle,the influence of externally applied electri...

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Autores:

Tipo de recurso:

Fecha de publicación:

2016

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/2479

Acceso en línea:

http://hdl.handle.net/11407/2479

Palabra clave:

Eigenvalues and eigenfunctions
Electric fields
Nanocrystals
Point defects
Raman scattering
Semiconductor quantum dots
Diagonalizations
Differential cross section
Donor impurities
Electron Raman scattering
Impurity centers
Intermediate state
Linearly polarized
Mesoscopic and nanoscale systems
Electromagnetic wave scattering

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restrictedAccess

License

http://purl.org/coar/access_right/c_16ec