Donor impurity states in semiconductor zincblende nitride quantum systems as a source of nonlinear optical response
The optical absorption and the optical rectification coefficients associated to hydrogenic impurity interstate transitions in zincblende GaN-based nanostructures of the quantum wire type are investigated. The system is assumed to have cylindrical shape and the influence of external tuning probes suc...
- Autores:
- Tipo de recurso:
- Fecha de publicación:
- 2017
- Institución:
- Universidad de Medellín
- Repositorio:
- Repositorio UDEM
- Idioma:
- OAI Identifier:
- oai:repository.udem.edu.co:11407/3153
- Acceso en línea:
- http://hdl.handle.net/11407/3153
- Palabra clave:
- Hydrostatic pressure
Nonlinear optics
Quantum wire
Zincblende GaN
Electric fields
Electromagnetic wave absorption
Gallium nitride
Hydraulics
Hydrostatic pressure
Light absorption
Nanowires
Nonlinear equations
Point defects
Quantum optics
Quantum theory
Semiconductor quantum wells
Semiconductor quantum wires
Wide band gap semiconductors
Zinc sulfide
Effective mass approximation
Non-linear optical coefficients
Non-perturbative solutions
Nonlinear optical response
Optical rectifications
Parabolic confinements
Static electric fields
Zinc-blende GaN
Nonlinear optics
- Rights
- restrictedAccess
- License
- http://purl.org/coar/access_right/c_16ec