Temperature shift of intraband absorption peak in tunnel-coupled QW structure

An experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorptio...

Full description

Autores:

Tipo de recurso:

Fecha de publicación:

2017

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/3150

Acceso en línea:

http://hdl.handle.net/11407/3150

Palabra clave:

Double quantum wells
Self-consistent calculations
Semiconductor nanostructures
Electromagnetic wave absorption
Light absorption
Temperature distribution
Absorption co-efficient
Double quantum well
Intersubband absorption
Intraband absorptions
Numerical calculation
Self-consistent calculation
Semiconductor nanostructures
Temperature dependence
Semiconductor quantum wells

Rights

restrictedAccess

License

http://purl.org/coar/access_right/c_16ec