Background impurities and a delta-doped QW. Part I: Center doping

The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-l...

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Fecha de publicación:: 2019

Institución:: Universidad de Medellín

Repositorio:: Repositorio UDEM

Idioma:: eng

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network_acronym_str	REPOUDEM2
network_name_str	Repositorio UDEM
repository_id_str
dc.title.none.fl_str_mv	Background impurities and a delta-doped QW. Part I: Center doping
title	Background impurities and a delta-doped QW. Part I: Center doping
spellingShingle	Background impurities and a delta-doped QW. Part I: Center doping impurity binding energy modulation doping self-consistent calculation semiconductor quantum wells Binding energy Semiconductor doping Silicon Background impurities Energy characteristics Impurity binding energy Intersubband optical transitions Modulation doping Quantum well structures Self-consistent calculation Self-consistent method Semiconductor quantum wells
title_short	Background impurities and a delta-doped QW. Part I: Center doping
title_full	Background impurities and a delta-doped QW. Part I: Center doping
title_fullStr	Background impurities and a delta-doped QW. Part I: Center doping
title_full_unstemmed	Background impurities and a delta-doped QW. Part I: Center doping
title_sort	Background impurities and a delta-doped QW. Part I: Center doping
dc.subject.none.fl_str_mv	impurity binding energy modulation doping self-consistent calculation semiconductor quantum wells Binding energy Semiconductor doping Silicon Background impurities Energy characteristics Impurity binding energy Intersubband optical transitions Modulation doping Quantum well structures Self-consistent calculation Self-consistent method Semiconductor quantum wells
topic	impurity binding energy modulation doping self-consistent calculation semiconductor quantum wells Binding energy Semiconductor doping Silicon Background impurities Energy characteristics Impurity binding energy Intersubband optical transitions Modulation doping Quantum well structures Self-consistent calculation Self-consistent method Semiconductor quantum wells
description	The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-layer. The delta-layer impurity binding energy as well as the energy differences between the first quantized electron subbands in the well demonstrate a significant dependence on the characteristics of the background doping. Therefore, the background doping cannot be neglected when studying phenomena like intersubband optical transitions. © 2019 IOP Publishing Ltd.
publishDate	2019
dc.date.accessioned.none.fl_str_mv	2020-04-29T14:53:58Z
dc.date.available.none.fl_str_mv	2020-04-29T14:53:58Z
dc.date.none.fl_str_mv	2019
dc.type.eng.fl_str_mv	Article
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dc.type.coar.fl_str_mv	http://purl.org/coar/resource_type/c_6501 http://purl.org/coar/resource_type/c_2df8fbb1
dc.type.driver.none.fl_str_mv	info:eu-repo/semantics/article
dc.identifier.issn.none.fl_str_mv	2681242
dc.identifier.uri.none.fl_str_mv	http://hdl.handle.net/11407/5776
dc.identifier.doi.none.fl_str_mv	10.1088/1361-6641/ab4c7a
identifier_str_mv	2681242 10.1088/1361-6641/ab4c7a
url	http://hdl.handle.net/11407/5776
dc.language.iso.none.fl_str_mv	eng
language	eng
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dc.relation.citationvolume.none.fl_str_mv	34
dc.relation.citationissue.none.fl_str_mv	12
dc.relation.references.none.fl_str_mv	Bastard, G., (1981) Phys. Rev., 24, p. 4714 Mailhiot, C., Chang, Y.C., McGill, T.C., (1982) Phys. Rev., 26, p. 4449 Priester, C., Bastard, G., Allan, G., Lannoo, M., (1984) Phys. Rev., 30, p. 6029 Masselink, W.T., Chang, Y.C., Morkoc, H., (1983) Phys. Rev., 28, p. 7373 Chaudhuri, S., Bajaj, K.K., (1984) Phys. Rev., 29, p. 1803 Chaudhuri, S., (1983) Phys. Rev., 28, p. 4480 Fraizzoli, S., Bassani, F., Buczko, R., (1990) Phys. Rev., 41, p. 5096 Brum, J.A., Bastard, G., Guillemot, C., (1984) Phys. Rev., 30, p. 905 Oliveira, L.E., Falicov, L.M., (1986) Phys. Rev., 34, p. 8676 Lopez, S.Y., Porras-Montenegro, N., Duque, C.A., (2003) Semicond. Sci. Technol., 18 (7), p. 718 Zhao, G.J., Liang, X.X., Ban, S.L., (2003) Phys. Lett., 319, p. 191 Panahi, H., Maleki, M., (2008) J. Appl. Scien., 8, p. 636 Raigoza, N., Morales, A.L., Montes, A., Porras-Montenegro, N., Duque, C.A., (2004) Phys. Rev., 69 López, S.Y., Porras-Montenegro, N., Duque, C.A., (2003) Phys. Stat. Sol., p. 648 Loehr, J.P., Singh, J., (1990) Phys. Rev., 41, p. 3695 Brum, A., Priester, C., Allan, G., (1985) Phys. Rev., 32, p. 2378 Weber, G., (1990) Phys. Rev., 41, p. 10043 Greene, R.L., Bajaj, K.K., (1985) Phys. Rev., 31, p. 913 Elabsy, A.M., (1992) Physica Scripta, 46 (5), p. 473 Peter, A.J., Navaneethakrishnanb, K., (2008) Superlat. Microst., 43, p. 63 Kasapoglu, E., (2008) Phys. Lett., 373, p. 140 Fanyaao, Q., Fonseca, A.L.A., Nunes, O.A.C., (1996) Phys. Stat. Sol., 197, p. 349 Qu, F., Morais, P.C., (1998) J. Phys. Soc. Jpn., 67, p. 513 Sari, H., Kasapoglu, E., Sokmen, I., Balkan, N., (2003) Semicond. Sci. Technol., 18 (6), p. 470 Radhakrishnan, N., Peter, A.J., (2009) Physica, 41, p. 1841 Shubert, E.F., (1990) J. Vac Sci. Technol., 83, p. 2980 Altukhov, I.V., Chirkova, E.G., Sinis, V.P., Kagan, M.S., Gousev, Y.P., Thomas, S.G., Wang, K.L., Yassievich, I.N., (2001) Appl. Phys. Lett., 79, p. 3909 Blom, A., Odnoblyudov, M.A., Cheng, H.H., Yassievich, I.N., Chao, K.A., (2001) Appl. Phys. Lett., 79, p. 713 Bondar, V.M., Dalakyan, A.T., Vorobev, L.E., Firsov, D.A., Tulupenko, V.N., (1999) Jetp Lett., 70, p. 265 Yen, S.T., Tulupenko, V.N., Cheng, E.S., Chung, P.K., Lee, C.P., Dalakyan, A.T., Chao, K.A., (2004) J. Appl. Phys., 96, p. 4970 Benz, A., Fasching, G., Andrews, A.M., Martl, M., Unterrainer, K., (2007) Appl. Phys. Lett., 90 Levine, B.F., (1993) Journ. Appl. Phys., 74, p. R1 Fan, F., Li, W., Gu, W.H., Wang, X.H., Chang, S.J., (2013) Photonics Nanostruct, 11, p. 4854 Efros, A.L., (1978) Sov. Phys. Usp., 21 (9), p. 746 Tulupenko, V., Abramov, A., Belichenko, Y., Akimov, V., Bogdanova, T., Poroshin, V., Fomina, O., (2011) J. Appl. Phys., 109 Tulupenko, V., Duque, C.A., Demedyuk, R., Belichenko, Y., Duque, C.M., Akimov, V., Poroshin, V., Fomina, O., (2013) Philos. Mag. Lett., 93, p. 42 Tulupenko, V., (2015) Physica, 66 Tulupenko, V., Duque, C.A., Morales, A.L., Tiutiunnyk, A., Demediuk, R., Dmytrychenko, T., Fomina, O., Mora-Ramos, M.E., (2017) Phys. Status Solidi, 254 Blom, A., Odnoblyudov, M.A., Yassievich, I.N., Chao, K.A., (2003) Phys. Rev., 68 Rieger, M.M., Vogl, P., (1993) Phys. Rev., 48, p. 14276 Schaffler, F., (1997) Semicond. Sci. Technol., 12 (12), p. 1515 Paul, D.J., (2004) Semicond. Sci. Technol., 19 (10), p. R75 Sant, S., Lodha, S., Ganguly, U., Mahapatra, S., Heinz, F.O., Smith, L., Moroz, V., Ganguly, S., (2013) J. Appl. Phys., 113 Oberbeck, L., Curson, N.J., Hallam, T., Simmons, M.Y., Bilger, G., Clark, R.G., (2004) Appl. Phys. Lett., 85, p. 1359 Goh, K.E.J., Augarten, Y., Oberbeck, L., Simmons, M.Y., (2008) Appl. Phys. Lett., 93 Kyazym-Zade, A.G., (1995) Semiconductors, 29, p. 10 Sirenko, Y.M., Mitin, V., (1994) J. Lumin., 58, p. 257 Stern, F., (1972) Phys. Rev., 5, p. 4891 Ando, T., Mori, S., (1979) J. Phys. Soc. Jap., 47, p. 1518 Stern, F., Das Sarma, S., (1984) Phys. Rev., 30, p. 840 Tan, I.H., Snider, G.L., Chang, L.D., Hu, E.L., (1990) J. Appl. Phys., 68, p. 4071 Bastard, G., (1991) Wave Mechanics Applied to Semiconductor Nanostructures Vinter, B., (1982) Phys. Rev., 26, p. 6808 Neamen, D.A., (2012) Semiconductor Physics and Devices Braunstein, R., Moore, A.R., Herman, F., (1958) Phys. Rev., 109, p. 695 Krussmann, R., Vollmer, H., Labusch, R., (1983) Phys. Stat. Sol., 118, p. 275 BenDaniel, D.J., Duke, C.B., (1966) Phys. Rev., 152, p. 683 Harrison, P., (2005) Quantum Wells, Wires and Dots Zubkov, V.I., Melnik, M.A., Solomonov, A.V., Tsvelev, E.O., Bugge, F., Weyers, M., Tränkle, G., (2004) Phys. Rev., 70 Zubkov, V.I., (2007) Semiconductors, 41, p. 331 Shiff, L.I., (1949) Quantum Meschanics Scolfaro, L.M.R., Beliaev, D., Enderlein, R., Leite, J.R., (1994) Phys. Rev., 50, p. 8699 Rodriguez-Vargas, I., Gaggero-Sager, L.M., (2006) Journ. Appl. Phys., 99, p. 033702 Jacson, J.D., (1962) Classical Electrodynamics Tanaka, K., Nagaoka, M., Yamabe, T., (1983) Phys. Rev, 28, p. 7068 Stopa, M., DasSarma, S., (1989) Phys. Rev, 40, p. 8466 Kohn, W., Luttinger, J.M., (1955) Phys. Rev., 98, p. 915 Ozturk, E., Sari, H., Ergun, Y., Sokmen, I., (2003) Phys., 334, p. 1 Ungan, F., Kasapoglu, E., Sar&imath;, H., Sökmen, I., (2009) Superlatt. Microst., 46, p. 864 Duque, C.A., (2015) Superlatt. Microst., 87, p. 5 Tulupenko, V., Duque, C.A., Akimov, V., Demediuk, R., Belykh, V., Tiutiunnyk, A., Morales, A.L., Fomina, O., (2015) Phys., 74, p. 400 Ramdas, A.K., Rodriguez, S., (1981) Rep. Prog. Phys., 44 (12), p. 1297
dc.rights.coar.fl_str_mv	http://purl.org/coar/access_right/c_16ec
rights_invalid_str_mv	http://purl.org/coar/access_right/c_16ec
dc.publisher.none.fl_str_mv	Institute of Physics Publishing
dc.publisher.program.none.fl_str_mv	Facultad de Ciencias Básicas
dc.publisher.faculty.none.fl_str_mv	Facultad de Ciencias Básicas
publisher.none.fl_str_mv	Institute of Physics Publishing
dc.source.none.fl_str_mv	Semiconductor Science and Technology
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spelling	20192020-04-29T14:53:58Z2020-04-29T14:53:58Z2681242http://hdl.handle.net/11407/577610.1088/1361-6641/ab4c7aThe influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-layer. The delta-layer impurity binding energy as well as the energy differences between the first quantized electron subbands in the well demonstrate a significant dependence on the characteristics of the background doping. Therefore, the background doping cannot be neglected when studying phenomena like intersubband optical transitions. © 2019 IOP Publishing Ltd.engInstitute of Physics PublishingFacultad de Ciencias BásicasFacultad de Ciencias Básicashttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85081139356&doi=10.1088%2f1361-6641%2fab4c7a&partnerID=40&md5=ae9b7e4552959ef33dcd023cb99e2bc63412Bastard, G., (1981) Phys. Rev., 24, p. 4714Mailhiot, C., Chang, Y.C., McGill, T.C., (1982) Phys. Rev., 26, p. 4449Priester, C., Bastard, G., Allan, G., Lannoo, M., (1984) Phys. Rev., 30, p. 6029Masselink, W.T., Chang, Y.C., Morkoc, H., (1983) Phys. Rev., 28, p. 7373Chaudhuri, S., Bajaj, K.K., (1984) Phys. Rev., 29, p. 1803Chaudhuri, S., (1983) Phys. Rev., 28, p. 4480Fraizzoli, S., Bassani, F., Buczko, R., (1990) Phys. Rev., 41, p. 5096Brum, J.A., Bastard, G., Guillemot, C., (1984) Phys. Rev., 30, p. 905Oliveira, L.E., Falicov, L.M., (1986) Phys. Rev., 34, p. 8676Lopez, S.Y., Porras-Montenegro, N., Duque, C.A., (2003) Semicond. Sci. Technol., 18 (7), p. 718Zhao, G.J., Liang, X.X., Ban, S.L., (2003) Phys. Lett., 319, p. 191Panahi, H., Maleki, M., (2008) J. Appl. Scien., 8, p. 636Raigoza, N., Morales, A.L., Montes, A., Porras-Montenegro, N., Duque, C.A., (2004) Phys. Rev., 69López, S.Y., Porras-Montenegro, N., Duque, C.A., (2003) Phys. Stat. Sol., p. 648Loehr, J.P., Singh, J., (1990) Phys. Rev., 41, p. 3695Brum, A., Priester, C., Allan, G., (1985) Phys. Rev., 32, p. 2378Weber, G., (1990) Phys. Rev., 41, p. 10043Greene, R.L., Bajaj, K.K., (1985) Phys. Rev., 31, p. 913Elabsy, A.M., (1992) Physica Scripta, 46 (5), p. 473Peter, A.J., Navaneethakrishnanb, K., (2008) Superlat. Microst., 43, p. 63Kasapoglu, E., (2008) Phys. Lett., 373, p. 140Fanyaao, Q., Fonseca, A.L.A., Nunes, O.A.C., (1996) Phys. Stat. Sol., 197, p. 349Qu, F., Morais, P.C., (1998) J. Phys. Soc. Jpn., 67, p. 513Sari, H., Kasapoglu, E., Sokmen, I., Balkan, N., (2003) Semicond. Sci. Technol., 18 (6), p. 470Radhakrishnan, N., Peter, A.J., (2009) Physica, 41, p. 1841Shubert, E.F., (1990) J. Vac Sci. Technol., 83, p. 2980Altukhov, I.V., Chirkova, E.G., Sinis, V.P., Kagan, M.S., Gousev, Y.P., Thomas, S.G., Wang, K.L., Yassievich, I.N., (2001) Appl. Phys. Lett., 79, p. 3909Blom, A., Odnoblyudov, M.A., Cheng, H.H., Yassievich, I.N., Chao, K.A., (2001) Appl. Phys. Lett., 79, p. 713Bondar, V.M., Dalakyan, A.T., Vorobev, L.E., Firsov, D.A., Tulupenko, V.N., (1999) Jetp Lett., 70, p. 265Yen, S.T., Tulupenko, V.N., Cheng, E.S., Chung, P.K., Lee, C.P., Dalakyan, A.T., Chao, K.A., (2004) J. Appl. Phys., 96, p. 4970Benz, A., Fasching, G., Andrews, A.M., Martl, M., Unterrainer, K., (2007) Appl. Phys. Lett., 90Levine, B.F., (1993) Journ. Appl. Phys., 74, p. R1Fan, F., Li, W., Gu, W.H., Wang, X.H., Chang, S.J., (2013) Photonics Nanostruct, 11, p. 4854Efros, A.L., (1978) Sov. Phys. Usp., 21 (9), p. 746Tulupenko, V., Abramov, A., Belichenko, Y., Akimov, V., Bogdanova, T., Poroshin, V., Fomina, O., (2011) J. Appl. Phys., 109Tulupenko, V., Duque, C.A., Demedyuk, R., Belichenko, Y., Duque, C.M., Akimov, V., Poroshin, V., Fomina, O., (2013) Philos. Mag. Lett., 93, p. 42Tulupenko, V., (2015) Physica, 66Tulupenko, V., Duque, C.A., Morales, A.L., Tiutiunnyk, A., Demediuk, R., Dmytrychenko, T., Fomina, O., Mora-Ramos, M.E., (2017) Phys. Status Solidi, 254Blom, A., Odnoblyudov, M.A., Yassievich, I.N., Chao, K.A., (2003) Phys. Rev., 68Rieger, M.M., Vogl, P., (1993) Phys. Rev., 48, p. 14276Schaffler, F., (1997) Semicond. Sci. Technol., 12 (12), p. 1515Paul, D.J., (2004) Semicond. Sci. Technol., 19 (10), p. R75Sant, S., Lodha, S., Ganguly, U., Mahapatra, S., Heinz, F.O., Smith, L., Moroz, V., Ganguly, S., (2013) J. Appl. Phys., 113Oberbeck, L., Curson, N.J., Hallam, T., Simmons, M.Y., Bilger, G., Clark, R.G., (2004) Appl. Phys. Lett., 85, p. 1359Goh, K.E.J., Augarten, Y., Oberbeck, L., Simmons, M.Y., (2008) Appl. Phys. Lett., 93Kyazym-Zade, A.G., (1995) Semiconductors, 29, p. 10Sirenko, Y.M., Mitin, V., (1994) J. Lumin., 58, p. 257Stern, F., (1972) Phys. Rev., 5, p. 4891Ando, T., Mori, S., (1979) J. Phys. Soc. Jap., 47, p. 1518Stern, F., Das Sarma, S., (1984) Phys. Rev., 30, p. 840Tan, I.H., Snider, G.L., Chang, L.D., Hu, E.L., (1990) J. Appl. Phys., 68, p. 4071Bastard, G., (1991) Wave Mechanics Applied to Semiconductor NanostructuresVinter, B., (1982) Phys. Rev., 26, p. 6808Neamen, D.A., (2012) Semiconductor Physics and DevicesBraunstein, R., Moore, A.R., Herman, F., (1958) Phys. Rev., 109, p. 695Krussmann, R., Vollmer, H., Labusch, R., (1983) Phys. Stat. Sol., 118, p. 275BenDaniel, D.J., Duke, C.B., (1966) Phys. Rev., 152, p. 683Harrison, P., (2005) Quantum Wells, Wires and DotsZubkov, V.I., Melnik, M.A., Solomonov, A.V., Tsvelev, E.O., Bugge, F., Weyers, M., Tränkle, G., (2004) Phys. Rev., 70Zubkov, V.I., (2007) Semiconductors, 41, p. 331Shiff, L.I., (1949) Quantum MeschanicsScolfaro, L.M.R., Beliaev, D., Enderlein, R., Leite, J.R., (1994) Phys. Rev., 50, p. 8699Rodriguez-Vargas, I., Gaggero-Sager, L.M., (2006) Journ. Appl. Phys., 99, p. 033702Jacson, J.D., (1962) Classical ElectrodynamicsTanaka, K., Nagaoka, M., Yamabe, T., (1983) Phys. Rev, 28, p. 7068Stopa, M., DasSarma, S., (1989) Phys. Rev, 40, p. 8466Kohn, W., Luttinger, J.M., (1955) Phys. Rev., 98, p. 915Ozturk, E., Sari, H., Ergun, Y., Sokmen, I., (2003) Phys., 334, p. 1Ungan, F., Kasapoglu, E., Sar&imath;, H., Sökmen, I., (2009) Superlatt. Microst., 46, p. 864Duque, C.A., (2015) Superlatt. Microst., 87, p. 5Tulupenko, V., Duque, C.A., Akimov, V., Demediuk, R., Belykh, V., Tiutiunnyk, A., Morales, A.L., Fomina, O., (2015) Phys., 74, p. 400Ramdas, A.K., Rodriguez, S., (1981) Rep. Prog. Phys., 44 (12), p. 1297Semiconductor Science and Technologyimpurity binding energymodulation dopingself-consistent calculationsemiconductor quantum wellsBinding energySemiconductor dopingSiliconBackground impuritiesEnergy characteristicsImpurity binding energyIntersubband optical transitionsModulation dopingQuantum well structuresSelf-consistent calculationSelf-consistent methodSemiconductor quantum wellsBackground impurities and a delta-doped QW. Part I: Center dopingArticleinfo:eu-repo/semantics/articlehttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/resource_type/c_6501http://purl.org/coar/resource_type/c_2df8fbb1Akimov, V., Facultad de Ciencias Básicas, Universidad de Medellín-UdeM, Carrera 87 No.30-65, Medellín, Colombia, Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No.52-21, Medellín, Colombia; Tulupenko, V., Donbass State Engineering Academy, Academichna str. 62, Kramatorsk, 84313, Ukraine, Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No.52-21, Medellín, Colombia; Duque, C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No.52-21, Medellín, Colombia; Morales, A.L., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No.52-21, Medellín, Colombia; Demediuk, R., Donbass State Engineering Academy, Academichna str. 62, Kramatorsk, 84313, Ukraine; Tiutiunnyk, A., Instituto de Alta Investigación, Cedenna, Universidad de Tarapacá, casilla 7D, Arica, Chile; Laroze, D., Instituto de Alta Investigación, Cedenna, Universidad de Tarapacá, casilla 7D, Arica, Chile; Kovalov, V., Donbass State Engineering Academy, Academichna str. 62, Kramatorsk, 84313, Ukraine; Sushchenko, D., Donbass State Engineering Academy, Academichna str. 62, Kramatorsk, 84313, Ukrainehttp://purl.org/coar/access_right/c_16ecAkimov V.Tulupenko V.Duque C.A.Morales A.L.Demediuk R.Tiutiunnyk A.Laroze D.Kovalov V.Sushchenko D.11407/5776oai:repository.udem.edu.co:11407/57762020-05-27 17:51:09.377Repositorio Institucional Universidad de Medellinrepositorio@udem.edu.co

Background impurities and a delta-doped QW. Part I: Center doping

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