Background impurities and a delta-doped QW. Part I: Center doping

The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-l...

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Autores:

Tipo de recurso:

Fecha de publicación:

2019

Institución:

Universidad de Medellín

Repositorio:

Repositorio UDEM

Idioma:

eng

OAI Identifier:

oai:repository.udem.edu.co:11407/5776

Acceso en línea:

http://hdl.handle.net/11407/5776

Palabra clave:

impurity binding energy
modulation doping
self-consistent calculation
semiconductor quantum wells
Binding energy
Semiconductor doping
Silicon
Background impurities
Energy characteristics
Impurity binding energy
Intersubband optical transitions
Modulation doping
Quantum well structures
Self-consistent calculation
Self-consistent method
Semiconductor quantum wells

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